Two part flexible light emitting semiconductor device

Patent metadata

Field	Value
Publication number	US-9236547-B2
Application number	US-201214233266-A
Country	US
Kind code	B2
Filing date	Aug 8, 2012
Priority date	Aug 17, 2011
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

Provided is a light emitting semiconductor device comprising a flexible dielectric layer, a conductive layer on at least one side of the dielectric layer, at least one cavity or via in the dielectric substrate, and a light emitting semiconductor supported by the cavity or via. Also provided is a support article comprising a flexible dielectric layer, a conductive layer on at least one side and at least one cavity or via in the dielectric substrate. Further provided is a flexible light emitting semiconductor device system comprising the above-described light emitting semiconductor device attached to the above-described support article.

First claim

What is claimed is:

1. A flexible LESD system comprising:
a light emitting semiconductor device comprising:
a flexible dielectric layer having a first major surface with a first conductive layer thereon and having a second major surface with a second conductive layer thereon, the dielectric layer having one or both of a first and second via extending through the dielectric layer and a cavity or a third via extending from the first surface to, or toward, the second surface of the dielectric layer, the first conductive layer comprising conductive features in electrical contact with one or both of the first and second vias, the cavity or third via at least partially filled with conductive material, the second conductive layer comprising conductive features in electrical contact with one or both of the first and second vias; the cavity, or third via, being configured to receive a light emitting semiconductor; and

a support article comprising:
a flexible dielectric layer having a first major surface and having a second major surface with a conductive layer thereon, the dielectric layer having at least two adjacent cavities or vias extending from the first major surface toward, or to, the second major surface, the two or more cavities or vias each configured to receive one or more bottom contacts of an LES package mounted on the support article, wherein contacts received by a single cavity or via have the same, or a neutral, polarity,

wherein the conductive features of the second conductive layer of the light emitting semiconductor device make one or both of electrical and thermal connections in the cavities or vias of the support article.

2. A flexible LESD system comprising:
a light emitting semiconductor device comprising:
a flexible dielectric layer having a first major surface with a first conductive layer thereon and having a second major surface with a second conductive layer thereon, the dielectric layer having one or both of a first and second via extending through the dielectric layer and a cavity or a third via extending from the first surface to, or toward, the second surface of the dielectric layer, the first conductive layer comprising conductive features in electrical contact with one or both of the first and second vias, the cavity or third via at least partially filled with conductive material, the second conductive layer comprising conductive features in electrical contact with one or both of the first and second vias; the cavity, or third via, being configured to receive a light emitting semiconductor; and

a support article comprising a flexible dielectric layer having a first major surface with a first conductive layer thereon and having a second major surface, the dielectric layer having at least one cavity, or via, extending from the second major surface toward, or to, the first major surface, the at least one cavity, or via, containing conductive material, the first conductive layer comprising a first conductive feature disposed atop the cavity, or via, and at least one second conductive feature disposed adjacent the first conductive feature.

3. The flexible LESD system of claim 2 wherein a cavity, or via, containing conductive material is disposed under the at least one second conductive feature of the support article.

4. The flexible LESD system of claim 2 wherein the second major surface of the flexible dielectric layer of the support article has a second conductive layer thereon.

5. A flexible LESD system comprising:
a light emitting semiconductor device comprising:
a flexible dielectric layer having a first major surface with a first conductive layer thereon and having a second major surface with a second conductive layer thereon, the dielectric layer having one or both of a first and second via extending through the dielectric layer and a cavity or a third via extending from the first surface to, or toward, the second surface of the dielectric layer, the first conductive layer comprising conductive features in electrical contact with one or both of the first and second vias, the cavity or third via at least partially filled with conductive material, the second conductive layer comprising conductive features in electrical contact with one or both of the first and second vias; the cavity, or third via, being configured to receive a light emitting semiconductor, wherein the conductive features of the second layer extend under at least a portion of the third via or cavity and are electrically isolated from each other; and
a support article comprising a flexible dielectric layer having a first major surface with a first conductive layer thereon and having a second major surface with a second conductive layer thereon, the dielectric layer having at least one cavity or via extending from the first major surface toward, or to, the second major surface and containing conductive material that form at least two electrically isolated conductive features.

6. The flexible LESD system of claim 5 wherein one or both conductive features of the light emitting semiconductor device comprises a protrusion and wherein at least one of the electrically isolated features comprises an indentation configured to receive the protrusion of the light emitting semiconductor device.

Assignees

• Palaniswamy Ravi
• Narag Alejandro Aldrin Il Agcaoili
• Gao Jian Xia
• Mooney Justine A
• 3M Innovative Properties Co

Inventors

• Palaniswamy Ravi
• Narag Alejandro Aldrin Il Agcaoili
• Gao Jian Xia
• Mooney Justine A

Classifications

• H10W90/754

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W72/884

  Die-attach connectors and bond wires · CPC title

• H10W70/688

  Flexible insulating substrates · CPC title

• H10W70/685

  comprising multiple insulating layers · CPC title

• H10W70/635

  Through-vias · CPC title