Graphene base transistor with reduced collector area

Patent metadata

Field	Value
Publication number	US-9236432-B2
Application number	US-201414178375-A
Country	US
Kind code	B2
Filing date	Feb 12, 2014
Priority date	Mar 20, 2013
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

A graphene base transistor with reduced collector area comprising an electron injection region, an electron collection region, and a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith. A method of making a graphene base transistor with reduced collector area comprising forming an electron injection region, forming an electron collection region, and forming a base region wherein the base region comprises one or more sheets of graphene and wherein the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces therewith.

First claim

What we claim is:

1. A graphene base transistor with reduced collector area comprising:
an electron emitter region;
an electron collection region; and
a base region wherein the base region comprises one or more sheets of graphene
wherein the graphene is doped and wherein said doping increases the graphene to semiconductor heterojunction barrier height and lowers the base resistance and
wherein the base region is intermediate the electron injection region and the
electron collection region and forms electrical interfaces therewith.

2. The graphene base transistor with reduced collector area of claim 1 wherein said doping is via intercalation doping after the electron emitter region is formed.

3. The graphene base transistor with reduced collector area of claim 1 wherein the ohmic contact resistance to the electron emitter region is less than 1×10 −5 ohm-cm 2 .

4. The graphene base transistor with reduced collector area of claim 3 wherein the ohmic contact to the electron emitter region is formed by a N+ doped graphene/semiconductor heterojunction.

5. The graphene base transistor with reduced collector area of claim 4 wherein the ohmic contact to electron emitter region is formed by an InGaN layer or an InN layer on the surface of a graphene nitride layer.

6. The graphene base transistor with reduced collector area of claim 1 wherein the base graphene material layer is larger in lateral dimension than the collector region and the emitter region such that one or more portions of the base graphene material layer resides on the surface of a bottom side material layer that is adjacent to the collector region while at least one portion of the base graphene material layer is in electric contact with the emitter region and the collector region.

7. The graphene base transistor with reduced collector area of claim 1 wherein a left lateral side portion of the base graphene material layer resides on the surface of at least one third region right side material layer, the right side portion of the base graphene material layer resides on the surface of at least one third region right side material layer, and the middle portion of the graphene base material is in electrical contact with the emitter region and/or the emitter/base interface and the collector region and/or the collector/base interface.

8. The graphene base transistor with reduced collector area of claim 1 wherein a dielectric layer is adjacent to a first region and resides on the surface of the base graphene material layer.

9. The graphene base transistor with reduced collector area of claim 7 wherein the first and third region side material layer is one selected from the group consisting of a silicon oxide material, a silicon nitride material, a boron nitride layer, an aluminum nitride, an indium aluminum nitride, an aluminum gallium nitride, a graphene oxide layer, a fluoridated graphene layer, a diamond layer, a microwave insulating layer, a polymer material, a material with a dielectric constant less than about 4.0, a low-k material layer, a porous material layer, a material with pores that are filled with a gas or partial vacuum, a gas or partial vacuum hermetically sealed, and combinations thereof.

10. The graphene base transistor with reduced collector area of claim 1 wherein electrons injected into the base graphene material are hot electrons and have the properties of ballistic transit through the base region, are coherent electrons, or are not hot electrons and have the properties of ballistic transit through the base region.

11. The graphene base transistor with reduced collector area of claim 1 wherein the sheet resistance of the base graphene material is less than 100 ohms/square and the thickness is less than 2 nm.

12. The graphene base transistor with reduced collector area of claim 11 wherein the electron collection region is of material selected from the group consisting of AlGaN, GaN, InAlN, and SiC.

13. The graphene base transistor with reduced collector area of claim 11 wherein electron emitter region is a semiconductor device comprising an n-type emitter layer and the electron collection region is an n-type collector layer, and an optional emitter transition region interposed between the n-type emitter layer and the base graphene material layer and an optional collector transition region interposed between the base graphene material layer and the n-type collector layer.

14. The graphene base transistor with reduced collector area of claim 13 wherein the base graphene material layer comprises one or more sheets of graphene that have N-type conduction properties having predominantly electron conduction, one or more sheets that have P-type conduction properties having predominantly hole conduction, or a layered structure having one or more sheets with N-type conduction properties and also one or more sheets with P-type conduction properties.

Assignees

• Kub Francis J
• Anderson Travis J
• Koehler Andrew D
• Us Navy

Inventors

• Kub Francis J
• Anderson Travis J
• Koehler Andrew D

Classifications

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D62/8503

  Nitride Group III-V materials, e.g. AlN or GaN · CPC title

• H10D62/8325

  Silicon carbide · CPC title

• H10D62/8303

  Diamond · CPC title

• H10D62/882

  Graphene · CPC title