Built-up substrate, method for manufacturing same, and semiconductor integrated circuit package

Patent metadata

Field	Value
Publication number	US-9236338-B2
Application number	US-201214122323-A
Country	US
Kind code	B2
Filing date	Oct 29, 2012
Priority date	Mar 27, 2012
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

A method for manufacturing a build-up substrate, the build-up substrate comprising an insulating layer and a wiring pattern layer stacked over a circuit substrate, said method comprising the steps of: (i) applying a photoactive metal oxide precursor material to one or both sides of the circuit substrate with a wiring pattern, and drying the applied photoactive metal oxide precursor material to form an insulating film; (ii) forming an opening for a via hole in the insulating film by exposure and development of the insulating film; (iii) applying a heat treatment to the insulating film to convert the insulating film into a metal oxide film, thereby forming a build-up insulating layer of the metal oxide film; and (iv) plating the build-up insulating layer to form via holes in the openings, forming a metal layer on the build-up insulating layer, and etching the metal layer to form a build-up wiring pattern; and (v) repeating the steps from (i) to (iv) at least one time.

First claim

The invention claimed is:

1. A method for manufacturing a build-up substrate, the build-up substrate comprising an insulating layer and a wiring pattern layer stacked over a circuit substrate, said method comprising the steps of:
(i) applying a photoactive oxide precursor material to one or both sides of the circuit substrate with a wiring pattern, and drying the applied photoactive oxide precursor material to form an insulating film;
(ii) forming an opening for a via hole in the insulating film by exposure and development of the insulating film;
(iii) applying a heat treatment to the insulating film to convert the insulating film into an oxide film, thereby forming a build-up insulating layer of the oxide film; and
(iv) plating the build-up insulating layer to form a via hole in the opening, forming a metal layer on the build-up insulating layer, and etching the metal layer to form a build-up wiring pattern; and
(v) repeating the steps from (i) to (iv) at least one time, wherein
the photoactive oxide precursor material is a hybrid material containing an organic functionality in an inorganic network thereof, and
the hybrid material is a siloxane oligomer with a maleimide group therein.

2. The method for manufacturing a build-up substrate according to claim 1 , wherein the heat treatment of the insulating film in the step (iii) is performed at a temperature of 500° C. or lower and 100° C. or higher.

3. The method for manufacturing a build-up substrate according to claim 1 , wherein the heat treatment of the insulating film in the step (iii) is performed under vacuum or inert gas atmosphere.

4. The method for manufacturing a build-up substrate according to claim 1 , wherein the photoactive oxide precursor material used in the step (i) contains a photosensitive sol-gel material.

5. The method for manufacturing a build-up substrate according to claim 4 , wherein the photoactive oxide precursor material used in the step (i) contains an alkoxide compound.

6. The method for manufacturing a build-up substrate according to claim 5 , wherein in the step (iii), the oxide film is formed from the alkoxide compound through hydrolysis of the alkoxide compound.

7. The method for manufacturing a build-up substrate according to claim 1 , wherein in the step (i), the photoactive oxide precursor material is applied by a spray method or slit coater method.

8. The method for manufacturing a build-up substrate according to claim 1 , wherein the circuit substrate comprises a metal foil or an organic film with the wiring pattern,
wherein in the step (i), the photoactive oxide precursor material is applied to one side of the circuit substrate, and
wherein after the step (v), the metal foil or organic film is removed.

9. A method for manufacturing a build-up substrate, the build-up substrate comprising an insulating layer and a wiring pattern layer stacked over a circuit substrate, said method comprising the steps of:
(i) applying a photoactive oxide precursor material to one or both sides of the circuit substrate with a wiring pattern, and drying the applied photoactive oxide precursor material to form an insulating film;
(ii) forming an opening for a via hole in the insulating film by exposure and development of the insulating film;
(iii) applying a heat treatment to the insulating film to convert the insulating film into an oxide film, thereby forming a build-up insulating layer of the oxide film; and
(iv) after forming a resist over a surface of the build-up insulating layer, entirely plating the build-up insulating layer and the resist, and finally removing the resist, so that the via hole and a build-up wiring pattern are provided in parts without the resist; and
(v) repeating the steps from (i) to (iv) at least one time, wherein
the photoactive oxide precursor material is a hybrid material containing an organic functionality in an inorganic network thereof, and
the hybrid material is a siloxane oligomer with a maleimide group therein.

10. A build-up substrate comprising a build-up insulating layer and a build-up wiring pattern stacked over one or both sides of a circuit substrate with a wiring pattern, wherein the build-up insulating layer is made of an oxide film formed from a photoactive metal oxide precursor material, wherein
the photoactive oxide precursor material is a hybrid material containing an organic functionality in an inorganic network thereof, and
the hybrid material is a siloxane oligomer with a maleimide group therein.

11. The build-up substrate according to claim 10 , wherein the oxide film of the build-up insulating layer contains at least one oxide selected from the group consisting of aluminum oxide, silicon oxide and magnesium oxide.

12. The build-up substrate according to claim 10 , wherein the build-up insulating layer has a thickness of 1 μm or more and 20 μm or less.

13. The build-up substrate according to claim 10 , wherein an insulating base of the circuit substrate is formed of organic material, and wherein at least one through hole penetrating the insulating base is provided in the circuit substrate.

14. The build-up substrate according to claim 13 , wherein the organic material of the insulating base contains at least one selected from the group consisting of an epoxy resin, a phenol resin and a polyimide resin.

15. The build-up substrate according to claim 10 , wherein an insulating base of the circuit substrate is formed of inorganic material, and wherein at least one through hole penetrating the insulating base is provided in the circuit substrate.

16. The build-up substrate according to claim 15 , wherein the inorganic material of the insulating base contains at least one selected from the group consisting of a glass component and a ceramic component.

17. The build-up substrate according to claim 16 , wherein the glass component is at least one kind of the glass component selected from the group consisting of borosilicate glass, aluminosilicate glass and aluminoborosilicate glass.

18. The build-up substrate according to claim 16 , wherein the ceramic component is at least one ceramic component selected from the group consisting of alumina, mullite and zirconia.

19. The build-up substrate according to claim 10 , wherein a transistor element is provided in the build-up substrate,
wherein at least a part of the oxide film of the build-up insulating layer serves as a gate insulating film,
wherein the build-up substrate comprises:
a semiconductor film formed of an oxide semiconductor over the oxide film;
source and drain electrodes each formed of at least a part of the build-up wiring pattern and in contact with the semiconductor film; and
a gate electrode formed of at least a part of the build-up wiring pattern positioned on a side opposite to a surface of the gate insulating film with the semiconductor film formed thereat.

20. A semiconductor integrated circuit package, comprising the build-up substrate according to claim 10 , wherein a semiconductor bare chip is flip-chip mounted on the build-up wiring pattern on the build-up insulating layer via a bump.

Assignees

• Panasonic Corp
• Panasonic Ip Man Co Ltd

Inventors

• Nakatani Seiichi
• Kawakita Koji
• Sawada Susumu
• Yamashita Yoshihisa

Classifications

• H05K1/0313

  Organic insulating material · CPC title

• H05K1/0306

  Inorganic insulating substrates, e.g. ceramic, glass · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W40/259

  Ceramics or glasses (H10W40/254, H10W40/257, H10W40/255, H10W40/251, H10W40/253 take precedence) · CPC title

• H10W70/692

  Ceramics or glasses · CPC title