Preparing method of reduced graphene oxide film using a chemical reduction method and a pressure-assisted thermal reduction method, reduced graphene oxide film prepared by the same, and graphene electrode including the reduced graphene oxide film

Patent metadata

Field	Value
Publication number	US-9236156-B2
Application number	US-201414220399-A
Country	US
Kind code	B2
Filing date	Mar 20, 2014
Priority date	Oct 18, 2013
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

A preparing method of a reduced graphene oxide film, a reduced graphene oxide film prepared by the preparing method, a graphene electrode including the reduced graphene oxide film, an organic thin film transistor including the graphene electrode, and an antistatic film including the reduced graphene oxide film are provided. The method for preparing a reduced graphene oxide film comprises: coating a graphene oxide-dispersed solution on a substrate to form a graphene oxide thin film; and reducing the graphene oxide thin film using a chemical reduction method and a pressure-assisted thermal reduction method to form a reduced graphene oxide film.

First claim

We claim:

1. A preparing method of a reduced graphene oxide film, comprising:
coating a graphene oxide-dispersed solution on a substrate to form a graphene oxide thin film; and
reducing the graphene oxide thin film using a chemical reduction method and a pressure-assisted thermal reduction method to form a reduced graphene oxide film,
wherein the pressure-assisted thermal reduction method includes adding heat and pressure to an upper side and a lower side of the substrate on which the graphene oxide thin film is formed.

2. The preparing method of a reduced graphene oxide film of claim 1 ,
wherein the substrate includes a flexible plastic substrate.

3. The preparing method of a reduced graphene oxide film of claim 2 ,
wherein the plastic substrate includes a member selected from the group consisting of polyethersulfone, polyimide, polycarbonate, polyehtylene naphthalate, and polyethylene terephthalate.

4. The preparing method of a reduced graphene oxide film of claim 1 ,
wherein the substrate is modified by an oxygen plasma treatment or a nitrogen plasma treatment.

5. The preparing method of a reduced graphene oxide film of claim 1 ,
wherein the graphene oxide-dispersed solution is prepared by dispersing oxidized graphite in water.

6. The preparing method of a reduced graphene oxide film of claim 5 ,
wherein the graphene oxide-dispersed solution further includes an alcohol of 100 volume % or less with respect to a volume of the water.

7. The preparing method of a reduced graphene oxide film of claim 1 ,
wherein the chemical reduction method uses a reducing agent selected from the group consisting of hydrazine, sodium borohydride, and sulfuric acid.

8. The preparing method of a reduced graphene oxide film of claim 1 ,
wherein the chemical reduction method is performed at a temperature in a range of from about 70° C. to about 200° C.

9. The preparing method of a reduced graphene oxide film of claim l,
wherein the pressure is about 2,000 kgf/cm 2 or less.

10. The preparing method of a reduced graphene oxide film of claim 1 ,
wherein the heat is added at a temperature in a range of from about 70° C. to about 200° C.

11. The preparing method of a reduced graphene oxide film of claim 1 ,
wherein the reduction by adding the heat and the pressure includes using hot-press or hot-plate.

Assignees

• Snu R&Db Foundation

Inventors

• Kim Sung Hyun
• Jang Jyongsik
• Shin Kyoung-Hwan

Classifications

• H01L51/055

  Electricity · mapped topic

• Y10T428/30

  Self-sustaining carbon mass or layer with impregnant or other layer · CPC title

• H01B1/04 Primary

  mainly consisting of carbon-silicon compounds, carbon or silicon · CPC title

• C23C16/50

  using electric discharges {(generation and control of plasma in discharge tubes for surface treatment H01J37/32, H01J37/34)} · CPC title

• H01L51/0045

  Electricity · mapped topic