Circuit for enhancing robustness of sub-threshold SRAM memory cell

Patent metadata

Field	Value
Publication number	US-9236115-B2
Application number	US-201214369651-A
Country	US
Kind code	B2
Filing date	Dec 27, 2012
Priority date	Dec 28, 2011
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

A circuit for improving process robustness of sub-threshold SRAM memory cells serves as an auxiliary circuit for a sub-threshold SRAM memory cell. The output of the circuit is connected to PMOS transistors of the sub-threshold SRAM memory cell and substrate of PMOS transistors in the circuit. The circuit includes a detection circuit for threshold voltages of the PMOS transistors and a differential input and single-ended output amplifier. The circuit changes the substrate voltage of the PMOS transistors in the sub-threshold SRAM memory cell and the PMOS transistors in the circuit in a self-adapting manner by detecting threshold voltage fluctuations of PMOS and NMOS transistor resulted from process fluctuations and thereby regulates the threshold voltages of the PMOS transistors, so that the threshold voltages of the PMOS and NMOS transistors match. The circuit improves the noise margin of sub-threshold SRAM memory cells and the process robustness of sub-threshold SRAM memory cells.

First claim

The invention claimed is:

1. A circuit for improving process robustness of sub-threshold SRAM memory cells, wherein, the circuit serves as an auxiliary circuit for a sub-threshold SRAM memory cell, the output (V bp ) of the circuit is connected to a PMOS transistor of the sub-threshold SRAM memory cell and a substrate of the PMOS transistor in the circuit;
the circuit comprises a detection circuit for a threshold voltage of the PMOS transistor and a differential input and single-e…

Assignees

• Univ Southeast

Inventors

• Bai Na
• Shi Longxing
• Yang Jun
• Liu Xinning
• Zhu Jiafeng
• Feng Yue
• Gong Cai
• Pan Fei
• Chang Hong
• Deng Yifeng
• Chen Yuan
• Xia Yingcheng

Classifications

• G11C11/417 Primary

  Physics · mapped topic

• G11C11/412

  Physics · mapped topic

• H01L27/1104

  Electricity · mapped topic

• G11C11/419 Primary

  Physics · mapped topic

• H10B10/12

  Electricity · mapped topic