Chemical sensing and/or measuring devices and methods

Patent metadata

Field	Value
Publication number	US-9234872-B2
Application number	US-201514673700-A
Country	US
Kind code	B2
Filing date	Mar 30, 2015
Priority date	Nov 23, 2009
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

Methods for fabricating silicon nanowire chemical sensing devices, devices thus obtained, and methods for utilizing devices for sensing and measuring chemical concentration of selected species in a fluid are described. Devices may comprise a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.

First claim

We claim:

1. A method for fabricating a device, the method comprising:
providing a semiconductor substrate with a planar surface;
forming at least one semiconductor nanopillar on the semiconductor substrate and perpendicular to the planar surface;
covering the semiconductor nanopillar with an insulating layer;
depositing a conductive layer on the insulating layer, such that all space between the conductive layer and the semiconductor nanopillar is completely filled by the insulating layer;
covering a portion of the conductive layer with a masking layer;
removing a conductive layer end of the conductive layer and an insulating layer end of the insulating layer, wherein the conductive layer end and the insulating layer end are not covered by the masking layer, thus exposing an uninsulated pillar end;
removing the masking layer; and
forming a functional layer on the conductive layer, such that the insulating layer end of the insulating layer protrudes beyond the conductive layer end of the conductive layer and terminates before the uninsulated pillar end, wherein the functional layer is a bilayer comprising:
a chemical-attracting layer configured to attract a selected type of chemical species; and
a semi-permeable insulating layer on the attractive layer, the semi-permeable insulating layer configured to allow the selected type of chemical species to pass through and configured to insulate the attractive layer and the conductive layer of the device.

2. The method of claim 1 , wherein the uninsulated pillar end forms an electrically contactable terminal and the chemical-attracting layer forms a chemically contactable terminal.

3. The method of claim 1 , wherein the chemical-attracting layer is configured to attract ions.

4. The method of claim 1 , wherein the semiconductor nanopillar and the semiconductor substrate are made of silicon.

5. The method of claim 1 , further comprising coating a backside terminal on the semiconductor substrate on a side opposite the nanopillar.

6. The method of claim 5 , wherein the device forms a metal-oxide-semiconductor field-effect transistor (MOSFET) structure.

7. The method of claim 6 , wherein the conductive layer forms a gate terminal of the MOSFET.

8. The method of claim 7 , wherein the semiconductor substrate forms a source or a drain of the MOSFET and the uninsulated pillar end forms respectively the drain or the source of the MOSFET.

9. The method of claim 1 , wherein fabricating the device includes fabrication within one or more microfluidic channel structures.

10. The method of claim 1 , wherein the semiconductor nanopillar is a plurality of semiconductor nanopillars.

11. A method of measuring chemical species concentration comprising:
providing a device comprising:
a semiconductor substrate with a planar surface;
a semiconductor nanopillar on the semiconductor substrate and perpendicular to the planar surface;
an insulating layer covering the semiconductor nanopillar;
a conductive layer covering the insulating layer, wherein all space between the conductive layer and the semiconductor nanopillar is completely filled by the insulating layer, wherein the conductive layer and the insulating layer are devoid of an end portion thereof, thus exposing an uninsulated pillar end of the semiconductor nanopillar; and
a functional layer covering the conductive layer wherein an insulating layer end of the insulating layer protrudes beyond a conductive layer end and terminates before the uninsulated pillar end of the semiconductor nanopillar, wherein the functional layer is a bilayer comprising:
a chemical-attracting layer configured to attract a selected type of chemical species; and
a semi-permeable insulating layer on the attractive layer, wherein the semi-permeable insulating layer is configured to allow the selected type of chemical species to pass through and is configured to insulate the attractive layer and the conductive layer of the device;

contacting a chemical-containing fluid with the device such that a selected type of chemical species in the chemical-containing fluid is suitable to be attracted by the chemical-attracting layer of the device;
forming a voltage difference between the uninsulated pillar end and the semiconductor substrate of the device; and
measuring a change in current flow between one or more of the uninsulated pillar end and the semiconductor substrate of the device, thus measuring the chemical species concentration.

12. The method of claim 11 , wherein forming the voltage difference includes contacting the uninsulated pillar end with the chemical-containing fluid.

13. The method of claim 11 , wherein the device is a first device, the method further comprising:
providing a second device;
measuring a change in current flow between the uninsulated pillar end and the semiconductor substrate of the second device;
obtaining a difference between the change in current flow (between the uninsulated pillar end and the semiconductor substrate) of the first device and the change in current flow (between the uninsulated pillar end and the semiconductor substrate) of the second device; and
comparing the difference to an ion-concentration model thus measuring the ion concentration.

14. The method of claim 12 , wherein the first device comprises a plurality of pillars with a first interpillar distance and the second device comprises a plurality of pillars with a second interpillar distance different from the first interpillar distance.

15. The method of claim 11 , wherein the device further comprising a plurality of semiconductor nanopillars.

16. The method of claim 11 , wherein the device is within a microfluidic channel structure.

Assignees

• California Inst Of Techn

Inventors

• Homyk Andrew P
• Henry Michael D
• Scherer Axel
• Walavalkar Sameer

Classifications

• H10D62/122

  oriented at angles to substrates, e.g. perpendicular to substrates · CPC title

• H10D30/43

  having one-dimensional [1D] charge carrier gas channels, e.g. quantum wire FETs or transistors having 1D quantum-confined channels · CPC title

• H10D30/025

  of vertical IGFETs (of VDMOS H10D30/0291; of vertical TFTs H10D30/0318) · CPC title

• B82Y15/00

  Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors · CPC title

• B82Y10/00

  Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic · CPC title