Etching gas

Patent metadata

Field	Value
Publication number	US-9234133-B2
Application number	US-201414455128-A
Country	US
Kind code	B2
Filing date	Aug 8, 2014
Priority date	Dec 1, 2009
Publication date	Jan 12, 2016
Grant date	Jan 12, 2016

Abstract

Disclosed is an etching gas provided containing CHF 2 COF. The etching gas may contain, as an additive, at least one kind of gas selected from O 2 , O 3 , CO, CO 2 , F 2 , NF 3 , Cl 2 , Br 2 , I 2 , XF n (In this formula, X represents Cl, I or Br. n represents an integer satisfying 1≦n≦7.), CH 4 , CH 3 F, CH 2 F 2 , CHF 3 , N 2 , He, Ar, Ne, Kr and the like, from CH 4 , C 2 H 2 , C 2 H 4 , C 2 H 6 , C 3 H 4 , C 3 H 6 , C 3 H 8 , HI, HBr, HCl, CO, NO, NH 3 , H 2 and the like, or from CH 4 , CH 3 F, CH 2 F 2 and CHF 3 . This etching gas is not only excellent in etching performances such as the selection ratio to a resist and the patterning profile but also easily available and does not substantially by-produce CF 4 that places a burden on the environment.

First claim

The invention claimed is:

1. A method, comprising etching a semiconductor, a dielectric substance, or a thin film formed of a metal with an etching gas comprising CHF 2 COF.

2. The method of claim 1 , wherein the semiconductor or the dielectric substance is a silicon-containing substance.

3. The method of claim 1 , further comprising ashing the semiconductor, the dielectric substance, or the thin film formed of the metal with F 2 or O 2 after the etching.

4. The method of claim 1 , wherein the etching is reactive-ion etching, etching by electron cyclotron resonance, plasma etching, or microwave etching.

5. The method of claim 1 , wherein the etching gas further comprises at least one kind of gas selected from the group consisting of CH 4 , C 2 H 2 , C 2 H 4 , C 2 H 6 , C 3 H 4 , C 3 H 6 , C 3 H 8 , HI, HBr, HCl, CO, NO, NH 3 , H 2 , N 2 , He, Ar, Ne, and Kr as an additive.

6. The method of claim 5 , wherein the etching gas comprises CH 4 , C 2 H 2 , CAL, C 2 H 6 , C 3 H 4 , C 3 H 6 , C 3 H 8 , HI, HBr, HCl, CO, NO, NH 3 , H 2 , or combinations thereof in an amount of less than 10 times an amount of CHF 2 COF.

7. The method of claim 1 , wherein the etching gas further comprises at least one kind of gas selected from the group consisting of CH 4 , CH 3 F, CH 2 F 2 , and CHF 3 as an additive.

8. The method of claim 7 , wherein the etching gas comprises CH 4 , CH 3 F, CH 2 F 2 , CHF 3 , or combinations thereof in an amount less than 10 times an amount of CHF 2 COF.

9. The method of claim 1 , wherein the etching gas further comprises at least one kind of gas selected from the group consisting of O 2 , O 3 , CO, CO 2 , F 2 , NF 3 , Cl 2 , Br 2 , I 2 , XF n , CH 4 , CH 3 F, CH 2 F 2 , CHF 3 , N 2 , He, Ar, Ne, and Kr as an additive, wherein X represents Cl, I or Br and n represents an integer 1≦n≦7.

10. The method of claim 9 , wherein the etching gas comprises O 2 , O 3 , CO 2 , F 2 , NF 3 , Cl 2 , Br 2 , I 2 , XF n , or combinations thereof in an amount of 1/20 to 30 times an amount of CHF 2 COF.

11. The method of claim 9 , wherein the etching gas comprises O 2 , O 3 , CO 2 , F 2 , NF 3 , Cl 2 , Br 2 , I 2 , XF n , or combinations thereof in an amount of 1/10 to 10 times an amount of CHF 2 COF.

12. The method of claim 9 , wherein the etching gas comprises CO in a mole ratio of CHF 2 COF:CO of 10:1 to 1:5.

13. The method of claim 9 , wherein the etching gas comprises CO in a mole ratio of CHF 2 COF:CO of 5:1 to 1:1.

Assignees

• Central Glass Co Ltd

Inventors

• Takada Naoto
• Mori Isamu

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P50/242 Primary

  of Group IV materials · CPC title

• C07C53/48

  Halogenated acetyl halides · CPC title

• C07C19/08 Primary

  containing fluorine · CPC title

• C09K13/00 Primary

  Etching, surface-brightening or pickling compositions (for glass C03C15/00, {C03C25/66; for mortars, concrete, artificial or natural stone or ceramics C04B41/5338}; for metallic material C23F, C23G1/00, C25F1/00; {for semi-conductors H10P52/40}) · CPC title