Bidirectional two-base bipolar junction transistor devices, operation, circuits, and systems with diode-mode turn-on and collector-side base driven

Patent metadata

Field	Value
Publication number	US-9231582-B1
Application number	US-201514791977-A
Country	US
Kind code	B1
Filing date	Jul 6, 2015
Priority date	Jun 24, 2013
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

Methods, systems, circuits, and devices for power-packet-switching power converters using bidirectional bipolar transistors (BTRANs) for switching. Four-terminal three-layer BTRANs provide substantially identical operation in either direction with forward voltages of less than a diode drop. BTRANs are fully symmetric merged double-base bidirectional bipolar opposite-faced devices which operate under conditions of high non-equilibrium carrier concentration, and which can have surprising synergies when used as bidirectional switches for power-packet-switching power converters. BTRANs are driven into a state of high carrier concentration, making the on-state voltage drop very low.

First claim

What is claimed is:

1. A method for switching a power semiconductor device which includes both an n-type emitter/collector region, and also a p-type base contact region, on each of both first and second surfaces of a p-type semiconductor die, and which has an ON state and an OFF state, comprising the steps of:
at turn-on, when an external voltage difference is applied between the emitter/collector regions, shorting the more positive one of the emitter/collector regions together with the base contact region on the same one of the surfaces, to thereby conduct current with a diode voltage drop characteristic of a p-n junction between the emitter/collector region and the semiconductor die; and thereafter
in the ON state, flowing base current through the base contact region which is nearer the more positive one of the emitter/collector regions, without flowing base current through the other of the base contact regions;
wherein the base contact region on the first surface is not electrically connected to the base contact region on the second surface, except through the semiconductor die itself;
and wherein the emitter/collector region on the first surface is not directly electrically connected to the emitter/collector region on the second surface, except through the semiconductor die itself;
whereby bidirectional switching is achieved with an on-state voltage drop which is less than the diode drop.

2. The method of claim 1 , wherein the semiconductor die is silicon.

3. The method of claim 1 , further comprising, in the OFF state, floating one of the base contact regions.

4. The method of claim 1 , whereby said shorting allows current to flow between the shorted base contact and emitter/collector region on the opposite surfaces as through a diode.

5. The method of claim 1 , wherein said step of flowing base current comprises sourcing current to said base contact region.

6. A method for switching a power semiconductor device which includes both a p-type emitter/collector region, and also an n-type base contact region, on each of both first and second surfaces of an n-type semiconductor die, and which has an ON state and an OFF state, comprising the steps of:
at turn-on, when an external voltage difference is applied between the emitter/collector regions, shorting the more negative one of the emitter/collector regions together with the base contact region on the same one of the surfaces, to thereby conduct current with a diode voltage drop characteristic of a p-n junction between the emitter/collector region and the semiconductor die; and thereafter
in the ON state, flowing base current through the base contact region which is nearer the more negative one of the emitter/collector regions, without flowing base current through the other of the base contact regions;
wherein the base contact region on the first surface is not electrically connected to the base contact region on the second surface, except through the semiconductor die itself;
and wherein the emitter/collector region on the first surface is not directly electrically connected to the emitter/collector region on the second surface, except through the semiconductor die itself;
whereby bidirectional switching is achieved with an on-state voltage drop which is less than the diode drop.

7. The method of claim 6 , wherein the semiconductor die is silicon.

8. The method of claim 6 , further comprising, in the OFF state, floating one of the base contact regions.

9. The method of claim 6 , whereby said shorting allows current to flow between the shorted base contact and emitter/collector region on the opposite surfaces as through a diode.

10. The method of claim 6 , wherein said step of flowing base current comprises sinking current from said base contact region.

Assignees

• Ideal Power Inc

Inventors

• Alexander William C
• Blanchard Richard A

Classifications

• H10D12/441

  Vertical IGBTs · CPC title

• H10D10/861

  having an emitter region comprising one or more non-monocrystalline elements of Group IV, e.g. amorphous silicon · CPC title

• H10D10/40

  Vertical BJTs {(Vertical Heterojunction BJTs H10D10/821)} · CPC title

• H10D62/137

  Collector regions of BJTs · CPC title

• H10D62/136

  of heterojunction BJTs  (vertical heterojunction BJTs having one or more non-monocrystalline Group IV elements H10D10/861) · CPC title