Light-emitting element and the manufacturing method thereof

Patent metadata

Field	Value
Publication number	US-9231024-B2
Application number	US-201113242495-A
Country	US
Kind code	B2
Filing date	Sep 23, 2011
Priority date	Sep 23, 2010
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

A light-emitting element includes: a substrate being a monocrystalline structure, comprising a plurality of recesses; and a plurality of first light-emitting stacks formed in the recesses respectively.

First claim

What is claimed is:

1. A light-emitting element comprising:
a substrate of a monocrystalline structure, comprising a plurality of recesses, each recess comprising a bottom surface and a side surface; and
a plurality of first light-emitting stacks, each first light-emitting stack comprising an epitaxial layer substantially parallel with the bottom surface and directly contacting the bottom surface and the side surface.

2. The light-emitting element of claim 1 , wherein the substrate comprises a base portion and at least a protrusion portion protruded from the base portion defining the plurality of recesses.

3. The light-emitting element of claim 2 , wherein the base portion comprises an uneven surface.

4. The light-emitting element of claim 1 , wherein each of the first light-emitting stacks comprises two contact regions on the same side of the substrate.

5. The light-emitting element of claim 4 , further comprising a conductive structure electrically connecting a first contact region of one first light-emitting stack to a second contact region of another first light-emitting stack.

6. The light-emitting element of claim 2 , further comprising a second light-emitting stack formed on the protrusion portion.

7. The light-emitting element of claim 6 , wherein each of the first light-emitting stacks and the second light-emitting stacks comprise two contact regions on the same side of the substrate.

8. The light-emitting element of claim 7 , wherein the distance between the top of the first light-emitting stack and the top surface of each of the protrusion portion is between 5 and 20 μm.

9. The light-emitting element of claim 6 , further comprising a conductive structure connecting the first light-emitting stack and the second light-emitting stack, wherein the second light-emitting stack comprises an active layer for emitting light, and the active layer comprises a side surface covered by the conductive structure.

10. The light-emitting element of claim 9 , further comprising an insulating layer between the second light-emitting stack and the conductive structure.

11. The light-emitting element of claim 2 , wherein the width of the protrusion portion is between 35 μm and 250 μm.

12. The light-emitting element of claim 1 , wherein the dielectric constant of the substrate is greater than 7.8.

13. The light-emitting element of claim 2 , wherein a width of one of the base portions is substantially the same as a width of the first light-emitting stack formed thereon.

14. The light-emitting element of claim 2 , wherein each of the first light-emitting stacks comprises a conductive structure electrically connecting one first light-emitting stack to an another first light-emitting stack and electrically isolated from the protrusion portion of the substrate.

15. The light-emitting element of claim 2 , wherein the base portion and the protrusion portion are an integral whole.

16. The light-emitting element of claim 2 , wherein there is no space between the first light-emitting stack and the protrusion portion.

17. The light-emitting element of claim 5 , wherein the conductive structure upwardly extends along the side surface of the substrate.

18. The light-emitting element of claim 5 , wherein the conductive structure strides over a protrusion portion the substrate.

19. The light-emitting element of claim 6 , wherein the protrusion portion and the second light-emitting stack substantially have a same width.

Assignees

• Tao Ching-San
• Ko Ting-Chia
• Kuo De-Shan
• Ko Tsun-Kai
• Epistar Corp

Inventors

• Tao Ching-San
• Ko Ting-Chia
• Kuo De-Shan
• Ko Tsun-Kai

Classifications

• H10H20/01335

  the light-emitting regions comprising nitride materials · CPC title

• H10H20/82

  Roughened surfaces, e.g. at the interface between epitaxial layers · CPC title

• H10H29/14 Primary

  comprising multiple light-emitting semiconductor components · CPC title

• H01L33/22

  Electricity · mapped topic

• H01L27/153 Primary

  Electricity · mapped topic