Semiconductor devices having through-substrate via plugs and semiconductor packages including the same

Patent metadata

Field	Value
Publication number	US-9230897-B2
Application number	US-201414324386-A
Country	US
Kind code	B2
Filing date	Jul 7, 2014
Priority date	Dec 20, 2013
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

Provided is a semiconductor package including a package substrate having lands, a first semiconductor device mounted on the package substrate and having a bottom surface on which first lines are disposed, and solder balls respectively electrically connected to the lands of the package substrate with the first lines of the first semiconductor device. The first semiconductor device includes a first substrate, and through-substrate via (TSV) plugs that vertically pass through the first substrate. The TSV plugs are respectively vertically aligned with the first lines, overlap first regions corresponding to 70% or less of diameters of the solder balls from central axes of the solder balls, and do not overlap second regions corresponding to the remaining 30% or more of diameters of the solder balls from the central axes of the solder balls. Adjacent ones of the TSV plugs are arranged at irregular intervals with respect to each other.

First claim

What is claimed is:

1. A semiconductor package comprising:
a package substrate having lands;
a first semiconductor chip mounted on the package substrate, and including a first substrate, through-substrate via plugs vertically passing through the first substrate, first lines on a bottom surface on the first substrate and through-substrate via pads on a top surface of the first substrate; and
solder balls respectively electrically connected to the lands of the package substrate and the first lines of the first semiconductor chip,
wherein the through-substrate via pads are respectively vertically aligned with the through-substrate via plugs,
wherein the through-substrate via plugs include first through-substrate via plugs which are respectively vertically aligned with the first lines and overlap first regions corresponding to 70% or less of diameters of the solder balls from central axes of the solder balls, and second through-substrate via plugs which are arranged so that each first through-substrate via plug has a corresponding adjacent second through-substrate via plug and which do not overlap second regions corresponding to the remaining 30% or more of diameters of the solder balls from the central axes of the solder balls, and
wherein a first distance between first and second through-substrate via plugs of a first pair of the through-substrate via plugs is different from a second distance between first and second through-substrate via plugs of a second pair of the through-substrate via plugs.

2. The semiconductor package of claim 1 , wherein the through-substrate via plugs of the first semiconductor chip include a third through-substrate via plug disposed between one of the first through-substrate via plugs and a corresponding adjacent second through-substrate via plug, and do not vertically overlap the second region of the solder ball, and
wherein a first interval between the third through-substrate via plug and the corresponding first through-substrate via plug is different from a second interval between the corresponding first through-substrate via plug and the corresponding second through-substrate via plug.

3. The semiconductor package of claim 1 , wherein at least one of the second through-substrate via plugs vertically overlaps one of the first regions of the solder balls.

4. The semiconductor package of claim 3 , when the first through-substrate via plug and the corresponding second through-substrate via plug of a first air of the through-substrate via plugs vertically overlap a first solder ball of the solder balls the first through-substrate via plug of the first pair of the through-substrate via plugs is vertically aligned at the left side of the first region of the first solder ball, and the second through-substrate via plug of the first pair of the through-substrate via plugs is vertically aligned at the right side of the first region of the first solder ball.

5. The semiconductor package of claim 1 , wherein adjacent ones of the first lines are arranged at regular intervals with respect to each other.

6. The semiconductor package of claim 1 , further comprising pillars disposed between the first lines and the solder balls and having a smaller horizontal width than the first lines.

7. The semiconductor package of claim 6 , wherein the pillars are vertically aligned to overlap the through-substrate via plugs.

8. The semiconductor package of claim 1 , wherein the first semiconductor chip further comprises:
a first insulating layer between a bottom surface of the first substrate and the first lines; and
a passivation layer on the first insulating layer to partially expose the first lines.

9. The semiconductor package of claim 8 , wherein the first insulating layer covers end portions of the through-substrate via plugs.

10. The semiconductor package of claim 1 , wherein the first semiconductor chip further comprises:
a first insulating layer between the top surface of the first substrate and the through-substrate via pads;
a second insulating layer on the first insulating layer to cover the through-substrate via pads;
internal vias vertically passing through the second insulating layer and connected to the through-substrate via pads; and
first pads disposed on the second insulating layer and connected to the internal vias,
wherein the internal vias vertically overlap the through-substrate via plugs, and the first pads respectively vertically overlap the through-substrate via pads.

11. The semiconductor package of claim 10 , wherein each of the through-substrate via pads contacts a corresponding through-substrate via plug.

12. The semiconductor package of claim 10 , further comprising a second semiconductor chip stacked on the first semiconductor chip,
wherein the second semiconductor chip comprises:
a second substrate; and
second pads disposed on a bottom surface of the second substrate,
wherein the second pads of the second semiconductor chip respectively vertically overlap the first pads of the first semiconductor chip.

13. The semiconductor package of claim 12 , further comprising inter-chip bumps disposed between the first pads and the second pads to electrically connect each of the first pads to the corresponding second pad.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Kim Young-Bae

Classifications

• H10W20/212

  Top-view shapes or dispositions, e.g. top-view layouts of the vias · CPC title

• H10W90/724

  between a chip and a stacked insulating package substrate, interposer or RDL · CPC title

• H10W90/722

  between stacked chips · CPC title

• H10W90/297

  characterised by the through-semiconductor vias [TSVs] in the stacked chips · CPC title

• H10W72/9415

  relative to the surface, e.g. recessed, protruding · CPC title