Method for preparing a coarse-grain crystallized silicon layer

Patent metadata

Field	Value
Publication number	US-9230806-B2
Application number	US-201314391865-A
Country	US
Kind code	B2
Filing date	Apr 8, 2013
Priority date	Apr 11, 2012
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

The present invention relates to a method for forming a crystallized silicon layer made up of grains having an average size of no less than 20 μm, including at least the steps that comprise: (1) providing a layer of silicon to be (re)crystallized, the average grain size of which is less than 10 μm; (2) placing said layer of silicon to be (re)crystallized in contact with a liquid composition at least partially made up of a metal solvent; and (3) exposing the assembly to a thermal treatment suitable for (re)crystallizing said layer of silicon with the expected grain size, characterized in that said thermal treatment includes heating the assembly made up of the layer of silicon in contact with said liquid composition to a temperature that is lower than 1410° C. and at least equal to the eutectic temperature in the solvent-silicon phase diagram.

First claim

The invention claimed is:

1. A process for forming a crystalline silicon layer comprising grains having a mean size of greater than or equal to 20 μm, the process comprising the steps of:
(1) providing a cohesive layer of silicon to be (re)crystallized, the mean size of the grains of which is less than 10 μm;
(2) bringing said cohesive layer of silicon to be (re)crystallized into contact with a liquid composition formed completely or partly from at least one metallic solvent; and
(3) exposing the assembly formed by the silicon layer in contact with said liquid composition to a heat treatment suitable for the (re)crystallization of said layer of silicon to the expected grain size,
wherein said heat treatment comprises heating of the assembly at a temperature below 1410° C. and at least the eutectic temperature in the solvent-silicon phase diagram.

2. The process as claimed in claim 1 , wherein the heat treatment is carried out at a temperature ranging from 800° C. to 1350° C.

3. The process as claimed in claim 1 , wherein the heat treatment is carried out until said metallic solvent has completely evaporated.

4. The process as claimed in claim 1 , wherein steps (2) and (3) are carried out simultaneously.

5. The process as claimed in claim 1 , wherein the silicon layer obtained has a mean grain size of greater than or equal to 50 μm.

6. The process as claimed in claim 1 , wherein said silicon layer from step (1) is formed from amorphous and/or polycrystalline silicon having grains with a mean size ranging from 0 to 5 μm.

7. The process as claimed in claim 1 , wherein said metallic liquid solvent is selected from indium, tin, copper, gallium, and alloys thereof.

8. The process as claimed in claim 1 , wherein said liquid composition additionally comprises at least one dopant selected from aluminum, gallium, indium, boron, antimony, arsenic, phosphorus and mixtures thereof.

9. The process as claimed in claim 1 , wherein said liquid composition additionally comprises solid silicon.

10. The process as claimed in claim 9 , wherein said silicon is present in said liquid composition, in a content ranging from 0 to 4% by weight relative to the total weight of the composition.

11. The process as claimed in claim 9 , wherein said silicon is present in said liquid composition, in a content ranging from 0 to 2% by weight relative to the total weight of the composition.

12. The process as claimed in claim 1 , wherein said liquid composition comprises tin and solid silicon.

13. The process as claimed in claim 1 , wherein said liquid composition is formed prior to being brought into contact with said layer of silicon to be (re)crystallized.

14. The process as claimed in claim 1 , wherein said liquid composition is formed on contact with said layer of silicon to be (re)crystallized via the provision, at the surface of said silicon layer, of a solid-phase composition comprising at least one metallic solvent intended to form or become part of said liquid composition, and the heating of the assembly at a temperature at least the eutectic temperature in the solvent-silicon phase diagram and below 1410° C.

15. The process as claimed in claim 1 , wherein the heat treatment is carried out at a temperature ranging from 1000° C. to 1200° C.

16. The process as claimed in claim 1 , wherein the silicon layer obtained has a mean grain size of greater than or equal to 100 μm.

17. The process as claimed in claim 1 , wherein said silicon layer from step (1) is formed from amorphous and/or polycrystalline silicon having grains with a mean size ranging from 0 to 2 μm.

18. The process as claimed in claim 1 , wherein said metallic liquid solvent is selected from indium, tin and alloys thereof.

Assignees

• Commissariat Energie Atomique
• Tile S

Inventors

• Garandet Jean-Paul
• Brize Virginie
• Pihan Etienne
• Straboni Alain
• Dupont Florent

Classifications

• H10P14/3456

  Polycrystalline · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title

• H10P14/265

  using solutions · CPC title

• H10P14/20

  of semiconductor materials · CPC title

• H10P14/3802 Primary

  Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth · CPC title