Conductive nanostructure, method for molding same, and method for manufacturing a field emitter using same

US9230770B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9230770-B2
Application numberUS-201113704902-A
CountryUS
Kind codeB2
Filing dateFeb 23, 2011
Priority dateJun 17, 2010
Publication dateJan 5, 2016
Grant dateJan 5, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the interface between the conductive substrate and the conductive nanostructure, as well as to a method for molding the same, and a method for manufacturing a field emitter using the same.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for molding a conductive nanostructure comprising the steps of: (a) a process for forming a conductive nanostructure arranged on a conductive substrate; and (b) an electrical discharge machining process for the conductive nanostructure in an air environment, wherein the step (b) comprises forming a conductive interfacial compound between the conductive substrate and the conductive nanostructure. 2. The method of claim 1 , wherein a contact resistance between the conductive substrate and the conductive nanostructure is reduced in the (b) step. 3. The method of claim 1 , wherein the conductive nanostructure includes CNT (carbon nanotube). 4. The method of claim 1 , wherein the conductive nanostructure additionally includes metal or metallic oxide. 5. The method of claim 1 , wherein the (b) step includes an electrical discharge cutting process for the conductive nanostructure to have a predetermined length. 6. The method of claim 1 , wherein the (b) step comprises: (b1) a process for providing an electrical discharge machining electrode; and (b2) a process for generating an electrical discharge between the conductive nanostructure and the electrical discharge machining electrode. 7. The method of claim 1 , the (b) step comprises the steps of: (b1) a process for isolating and arranging the conductive nanostructure and the electrical discharge machining electrode in an air environment; (b2) a process for applying a voltage between the conductive nanostructure and the electrical discharge machining electrode; and (b3) a process for closing the conductive nanostructure to the electrical discharge machining electrode in which the voltage is applied to generate an electrical discharge. 8. The method of claim 6 , wherein the electrical discharge machining electrode is formed in a wire or cylindrical shaped. 9. The method of claim 6 , wherein the electrical discharge machining electrode is at least one selected from the group consisting of brass, graphite, silver-tungsten alloy, copper-tungsten alloy, iron, copper, zinc, phosphor bronze and aluminum or alloy thereof.

Assignees

Inventors

Classifications

  • Point emitters · CPC title

  • Metals and metal alloys · CPC title

  • Machining specially adapted for treating particular metal objects or for obtaining special effects or results on metal objects (heat treatment by cathodic discharge C21D1/38) · CPC title

  • oxides · CPC title

  • mainly consisting of carbon-silicon compounds, carbon or silicon · CPC title

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What does patent US9230770B2 cover?
The present invention relates to a conductive nanostructure, a method for molding the same, and a method for manufacturing a field emitter using the same. More particularly, the present invention relates to a field-emitting nanostructure comprising a conductive substrate, a conductive nanostructure arranged on the conductive substrate, and a conductive interfacial compound disposed in the inter…
Who is the assignee on this patent?
Kim Yong Hyup, Kim Wal Jun, Univ Seoul Nat R & Db Found
What technology area does this patent fall under?
Primary CPC classification H01J9/025. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).