Method for producing bi-polar complementary structure patterns

US9230589B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9230589-B2
Application numberUS-201414199882-A
CountryUS
Kind codeB2
Filing dateMar 6, 2014
Priority dateMar 12, 2013
Publication dateJan 5, 2016
Grant dateJan 5, 2016

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

The embodiments disclose a method including creating at least one first structure including magnetically isolated features in servo fields, and creating at least one second structure including finger-structure patterns including intentional weak nucleation points in servo fields to create a regular bi-polar magnetization direction after bulk DC initialization, and wherein the first and second structures form bi-polar complementary structure patterns.

First claim

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What is claimed is: 1. A method, comprising: creating at least one first structure including magnetically isolated features in servo fields; and creating at least one second structure including finger-structure patterns including intentional weak nucleation points in servo fields to create a regular bi-polar magnetization direction after bulk DC initialization, and wherein the first and second structures form bi-polar complementary structure patterns. 2. The method of claim 1 , further comprising radial direction chevron patterns and alternatively open chevron patterns e-beam etched into the magnetically isolated features including a width size equivalent to adjacent high density dot diameters. 3. The method of claim 1 , wherein the structures in servo fields form servo zone phase lock loop or position-error-signal fields to create bi-polar signals. 4. The method of claim 1 , wherein the magnetically isolated features include patterns with one or more extinguishable terminus. 5. The method of claim 1 , wherein the first structure is used for controlling deterministically magnetized servo-fields. 6. The method of claim 1 , wherein the first structure includes magnetically isolated feature structures including the radial direction chevron patterns and in another embodiment open chevron patterns in servo fields. 7. The method of claim 1 , wherein the second structure includes finger-structure patterns etched into servo fields including using an e-beam etch process wherein second structures include a width size equivalent to adjacent high density dot diameters. 8. The method of claim 1 , wherein the combined first and second structure creates servo zone phase lock loop position-error-signal fields. 9. The method of claim 1 , wherein the second structure includes finger-structure patterns wherein finger structures can span in a range from one e-beam field, approximately 10 micrometers (μm), to one logical radial zone, approximately 1 millimeter (mm). 10. The method of claim 1 , wherein the second structure includes polarity in the structure finger-structure patterns. 11. A structure, comprising: at least one magnetically isolated feature in servo fields; a polarity in the magnetically isolated feature; and a servo structure including at least one polarity magnetically isolated feature configured to create servo zone phase lock loop and position-error-signal fields configured to create randomized bi-polar signals. 12. The structure of claim 11 , wherein the magnetically isolated feature includes a width size equivalent to adjacent high density dot diameters. 13. The structure of claim 11 , wherein the magnetically isolated features are configured to include nucleation spots in servo fields to form servo zone phase lock loop and position-error-signal fields to create bi-polar signals. 14. The first structure of claim 11 , wherein the structure is configured for use in controlling randomly magnetized servo-fields. 15. The first structure of claim 11 , wherein the magnetically isolated feature is configured to include radial direction chevron patterns and in another embodiment open chevron patterns including a nucleation spot and at least one extinguishable terminus. 16. A structure, comprising: at least one structure configured to include at least one finger-structure pattern in servo fields; a polarity in the finger-structure pattern of the structure; and at least one intentional weak nucleation point in the finger-structure pattern configured to achieve a regular bi-polar magnetization direction after bulk DC initialization. 17. The structure of claim 16 , wherein the finger-structure can span in a range from one e-beam field, approximately 10 micrometers (μm), to one logical radial zone, approximately 1 millimeter (mm). 18. The structure of claim 16 , wherein the finger-structure pattern includes at least one extinguishable terminus. 19. The structure of claim 16 , wherein the structure is configured for use in controlling randomly magnetized servo-fields. 20. The structure of claim 16 , wherein the finger-structure pattern includes a width size equivalent to adjacent high density dot diameters.

Assignees

Inventors

Classifications

  • Servo signal format patterns or signal processing thereof, e.g. dual, tri, quad, burst signal patterns · CPC title

  • Patterned record carriers, wherein the magnetic recording layer is patterned into magnetic isolated data islands, e.g. discrete tracks · CPC title

  • Permanent magnets {[PM]} · CPC title

  • Sector, sample or burst servo format · CPC title

  • for manufacturing permanent magnets · CPC title

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What does patent US9230589B2 cover?
The embodiments disclose a method including creating at least one first structure including magnetically isolated features in servo fields, and creating at least one second structure including finger-structure patterns including intentional weak nucleation points in servo fields to create a regular bi-polar magnetization direction after bulk DC initialization, and wherein the first and second s…
Who is the assignee on this patent?
Seagate Technology Llc
What technology area does this patent fall under?
Primary CPC classification G11B5/855. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Jan 05 2016 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).