Semiconductor optical waveguide device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9229168-B2
Application number	US-201414198261-A
Country	US
Kind code	B2
Filing date	Mar 5, 2014
Priority date	Mar 8, 2013
Publication date	Jan 5, 2016
Grant date	Jan 5, 2016

Abstract

A semiconductor optical waveguide device includes a substrate having a first area and a second area, and first, second, and semiconductor mesas on the substrate. The first semiconductor mesa includes a cladding layer and a first mesa portion on the second area, the first mesa portion including first and second portions. The second semiconductor mesa includes an intermediate layer, a first core layer, and first and second mesa portions on the first and second areas, respectively. The third semiconductor mesa includes a second core layer, and first and second mesa portions having a greater width than that of the second semiconductor mesa. The first portion of the first semiconductor mesa has a substantially same width as the second mesa portion of the second semiconductor mesa. The first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first and second core layers.

First claim

What is claimed is:

1. A semiconductor optical waveguide device, comprising:
a substrate having a first area and a second area disposed along a first axis;
a first semiconductor mesa including a cladding layer and a first mesa portion disposed on the second area, the first mesa portion including a first portion and a second portion having a smaller width than the first portion;
a second semiconductor mesa disposed under the first semiconductor mesa, the second semiconductor mesa including an intermediate layer, a first core layer, a first mesa portion disposed on the first area, and a second mesa portion disposed on the second area; and
a third semiconductor mesa disposed between the second semiconductor mesa and the substrate, the third semiconductor mesa including a second core layer, a first mesa portion disposed on the first area and a second mesa portion disposed on the second area, the first mesa portion of the third semiconductor mesa having an end face thr receiving an input light,
wherein the first portion of the first semiconductor mesa has a substantially same width as the second mesa portion of the second semiconductor mesa,
each of the first and second mesa portions of the third semiconductor mesa has a width greater than a width of the second semiconductor mesa, and
the first core layer is optically coupled to the second core layer through the intermediate layer disposed between the first core layer and the second core layer.

2. The semiconductor optical waveguide device according to claim 1 , wherein the cladding layer is formed of a first III-V group compound semiconductor, and
the intermediate layer is formed of a second III-V group compound semiconductor.

3. The semiconductor optical waveguide device according to claim 2 , wherein the second III-V group compound semiconductor of the intermediate layer has a first conductive type, and the first III-V group compound semiconductor of the cladding layer has a second conductive type.

4. The semiconductor optical waveguide device according to claim 1 , wherein the second mesa portion of the second semiconductor mesa and the first mesa portion of the first semiconductor mesa extend along the first axis, and
the second mesa portion of the second semiconductor mesa and the first mesa portion of the first semiconductor mesa have a width of a single mode waveguide.

5. The semiconductor optical waveguide device according to claim 1 , further comprising:
a first electrode disposed on a surface of the second mesa portion of the third semiconductor mesa; and
a second electrode disposed on a surface of the first semiconductor mesa,
wherein the first mesa portion of the third semiconductor mesa has a smaller width than the second mesa portion of the third semiconductor mesa.

6. The semiconductor optical waveguide device according to claim 5 , wherein in the second mesa portion of the second semiconductor mesa, the first core layer constitutes an optical modulator that modulates light in response to an electrical signal applied through the first electrode and the second electrode.

7. The semiconductor optical waveguide device according to claim 1 , wherein the first mesa portion of the second semiconductor mesa includes a first portion, a tapered second portion, and a third portion,
the first portion has a smaller width than the second mesa portion of the second semiconductor mesa,
the tapered second portion has a width that gradually changes from the width of the first portion to the width of the second mesa portion of the second semiconductor mesa,
the third portion has substantially the same width as the second mesa portion of the second semiconductor mesa.

8. The semiconductor optical waveguide device according to claim 1 , wherein the substrate is formed of InP,
the intermediate layer is formed of n-type InP, and
the cladding layer is formed of p-type InP.

Assignees

• Sumitomo Electric Industries

Inventors

• Furuya Akira
• Kitamura Takamitsu
• Yagi Hideki
• Kono Naoya

Classifications

• G02B6/1228

  Tapered waveguides, e.g. integrated spot-size transformers (for coupling with fibres G02B6/305) · CPC title

• G02B6/305 Primary

  and having an integrated mode-size expanding section, e.g. tapered waveguide · CPC title

• G02F1/2257

  the optical waveguides being made of semiconducting material · CPC title

• G02F2201/06

  integrated waveguide · CPC title

• G02F2202/102

  In×P and alloy · CPC title