Semiconductor device and structure
US-8994404-B1 · Mar 31, 2015 · US
US9225331B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9225331-B2 |
| Application number | US-201313747318-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 22, 2013 |
| Priority date | Oct 9, 2009 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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A device including first and second semiconductor chips, each of first and second semiconductor chips including first to M-th penetration electrodes, M being an integer equal to or greater than 3, each of the first to M-th penetration electrodes penetrating through a semiconductor substrate, and the first semiconductor chip including a first input circuit coupled to the M-th penetration electrode of the first semiconductor chip at an input node thereof, the first and second semiconductor chips being stacked with each other in which the first to M-th penetration electrodes of the second semiconductor chip are vertically arranged respectively with the first to M-th penetration electrodes of the first semiconductor chip, in which the first to (M−2)-th penetration electrodes of the second semiconductor chip are electrically coupled to the second to (M−1)-th penetration electrodes of the first semiconductor chip, respectively.
Opening claim text (preview).
What is claimed is: 1. A device comprising: first and second semiconductor chips, each of the first and second semiconductor chips comprising: a semiconductor substrate; and first to M-th penetration electrodes, M being an integer equal to or greater than 3, each of the first to M-th penetration electrodes penetrating through the semiconductor substrate, the first semiconductor chip further comprising a first input circuit coupled to the M-th penetration electrode of the firs…
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