Level shifter including a timing control unit for high speed operation

Patent metadata

Field	Value
Publication number	US-9225330-B2
Application number	US-201414331009-A
Country	US
Kind code	B2
Filing date	Jul 14, 2014
Priority date	Aug 7, 2013
Publication date	Dec 29, 2015
Grant date	Dec 29, 2015

Abstract

A level shifter includes high breakdown voltage first and second PMOS transistors, high breakdown voltage first and second depression NMOS transistors having gates respectively supplied with first and second control signals, low breakdown voltage first and second NMOS transistors having gates respectively supplied with third and fourth control signals, and a timing control unit that generates the first control signal and the third control signal different from the first control signal corresponding to an inverted signal of an input signal, and generates the second control signal and the fourth control signal different from the second control signal corresponding to a non-inverted signal of the input signal.

First claim

What is claimed is:

1. A level shifter comprising:
high breakdown voltage first and second PMOS transistors placed in parallel between a first power supply voltage terminal and a reference voltage terminal, each transistor having a gate connected to a drain of the other transistor;
high breakdown voltage first and second depression NMOS transistors placed between the first and second PMOS transistors and the reference voltage terminal and having gates respectively supplied with first and second control signals;
low breakdown voltage first and second NMOS transistors placed between the first and second depression NMOS transistors and the reference voltage terminal and having gates respectively supplied with third and fourth control signals; and
a timing control unit placed between a second power supply voltage terminal supplied with a second power supply voltage lower than a first power supply voltage supplied to the first power supply voltage terminal and the reference voltage terminal, that generates the first control signal and the third control signal different from the first control signal corresponding to an inverted signal of an input signal, and generates the second control signal and the fourth control signal different from the second control signal corresponding to a non-inverted signal of the input signal,
wherein the high breakdown voltage is higher than the low breakdown voltage.

2. The level shifter according to claim 1 , wherein the timing control unit generates the first and second control signals with a lower slew rate at a rising edge than the third and fourth control signals and generates the third and fourth control signals with a lower slew rate at a falling edge than that of the first and second control signals.

3. The level shifter according to claim 1 , wherein the timing control unit generates the first and third control signals so that a gate-source voltage of the first depression NMOS transistor when a gate-source voltage of the first NMOS transistor falls so as to be lower than a threshold voltage of the first NMOS transistor is lower than a sum of a threshold voltage of the first depression NMOS transistor and the second power supply voltage and that the gate-source voltage of the first depression NMOS transistor when the gate-source voltage of the first NMOS transistor rises so as to be equal to or higher than the threshold voltage of the first NMOS transistor is lower than a sum of the threshold voltage of the first depression NMOS transistor and the second power supply voltage, and generates the second and fourth control signals so that a gate-source voltage of the second depression NMOS transistor when a gate-source voltage of the second NMOS transistor falls so as to be lower than a threshold voltage of the second NMOS transistor is lower than a sum of a threshold voltage of the second depression NMOS transistor and the second power supply voltage and that the gate-source voltage of the second depression NMOS transistor when the gate-source voltage of the second NMOS transistor rises so as to be equal to or higher than the threshold voltage of the second NMOS transistor is lower than a sum of the threshold voltage of the second depression NMOS transistor and the second power supply voltage.

4. The level shifter according to claim 1 , wherein
the timing control unit comprises
a first timing control circuit that generates the first and third control signals, and
a second timing control circuit that generates the second and fourth control signals,

the first timing control circuit includes
a low breakdown voltage third PMOS transistor and third NMOS transistor placed in series between the second power supply voltage terminal and the reference voltage terminal and having gates supplied with the input signal, and
a first resistor placed between the third PMOS transistor and the third NMOS transistor,

the second timing control circuit includes
a low breakdown voltage fourth PMOS transistor and fourth NMOS transistor placed in series between the second power supply voltage terminal and the reference voltage terminal and having gates supplied with an inverted signal of the input signal, and
a second resistor placed between the fourth PMOS transistor and the fourth NMOS transistor,

the first timing control circuit generates a voltage at a node between the third PMOS transistor and the first resistor as the third control signal and generates a voltage at a node between the third NMOS transistor and the first resistor as the first control signal, and
the second timing control circuit generates a voltage at a node between the fourth PMOS transistor and the second resistor as the fourth control signal and generates a voltage at a node between the fourth NMOS transistor and the second resistor as the second control signal.

5. The level shifter according to claim 4 , wherein each of the first and second resistors is a transfer gate composed of a low breakdown voltage PMOS transistor and NMOS transistor.

6. The level shifter according to claim 1 , wherein
the timing control unit comprises
a first timing control circuit that generates the first and third control signals, and
a second timing control circuit that generates the second and fourth control signals,

the first timing control circuit includes
a low breakdown voltage third PMOS transistor and third NMOS transistor placed in series between the second power supply voltage terminal and the reference voltage terminal and having gates supplied with the input signal, and
a low breakdown voltage fourth PMOS transistor and fourth NMOS transistor placed in series between the second power supply voltage terminal and the reference voltage terminal and having gates supplied with the input signal,

the second timing control circuit includes
a low breakdown voltage fifth PMOS transistor and fifth NMOS transistor placed in series between the second power supply voltage terminal and the reference voltage terminal and having gates supplied with an inverted signal of the input signal, and
a low breakdown voltage sixth PMOS transistor and sixth NMOS transistor placed in series between the second power supply voltage terminal and the reference voltage terminal and having gates supplied with an inverted signal of the input signal,

a driving capability of the third PMOS transistor is lower than a driving capability of the fourth PMOS transistor, and a driving capability of the third NMOS transistor is higher than a driving capability of the fourth NMOS transistor,
a driving capability of the fifth PMOS transistor is lower than a driving capability of the sixth PMOS transistor, and a driving capability of the fifth NMOS transistor is higher than a driving capability of the sixth NMOS transistor,
the first timing control circuit generates a voltage at a node between the third PMOS transistor and the third NMOS transistor as the first control signal and generates a voltage at a node between the fourth PMOS transistor and the fourth NMOS transistor as the third control signal, and
the second timing control circuit generates a voltage at a node between the fifth PMOS transistor and the fifth NMOS transistor as the second control signal and generates a voltage at a node between the sixth PMOS transistor and the sixth NMOS transistor as the fourth control signal.

7. The level shifter according to claim 1 , wherein
the timing control unit comprises
a low breakdown voltage third PMOS transistor and third NMOS transistor placed in series between the second power supply voltage terminal and the reference voltage terminal and having gates supplied with the input signal, and
a first resistor placed between the third PMOS transistor and the third NMOS transistor, and

the timing control unit generates a

Assignees

• Renesas Electronics Corp

Inventors

• Koudate Kazuhiro

Classifications

• H03K19/018521 Primary

  of complementary type, e.g. CMOS · CPC title

• H03K19/00315

  in field-effect transistor circuits · CPC title

• H03K19/0013 Primary

  in field effect transistor circuits · CPC title

• H03K19/017509

  Interface arrangements · CPC title

• H03K3/356113

  using additional transistors in the input circuit · CPC title