Semiconductor device and electronic device

Patent metadata

Field	Value
Publication number	US-9224879-B2
Application number	US-201313945975-A
Country	US
Kind code	B2
Filing date	Jul 19, 2013
Priority date	Aug 24, 2012
Publication date	Dec 29, 2015
Grant date	Dec 29, 2015

Abstract

There is provided a semiconductor device including a substrate made from a semiconductor material, and layers that are made from plural kinds of materials and formed over the substrate. An opening portion that is formed to penetrate at least a layer formed as an insulating film among the layers formed over the substrate and expose a surface of an electrode pad is filled with aluminum or an aluminum alloy.

First claim

What is claimed is:

1. A semiconductor device comprising:
a substrate made from a semiconductor material; and
layers that are made from plural types of materials and formed over the substrate,
wherein an opening portion is formed to penetrate at least a layer formed as an insulating film among the layers formed over the substrate and to expose a surface of an electrode pad filled with aluminum or an aluminum alloy,
wherein the opening portion is surrounded by organic substance material and the insulating film,
wherein the aluminum or the aluminum alloy is filled in the opening portion based on a heat resistance of the organic substrate material.

2. The semiconductor device according to claim 1 , wherein a wire electrically connected to the electrode pad is connected, by wire bonding, to the aluminum or the aluminum alloy with which the opening portion is filled.

3. The semiconductor device according to claim 1 , wherein the aluminum or the aluminum alloy with which the opening portion is filled includes a convex portion protruding from a surface of the semiconductor device.

4. The semiconductor device according to claim 3 , wherein the convex portion is pressure-bonded to another conductor electrically connected to the electrode pad, and connected to the other conductor by flip chip bonding.

5. The semiconductor device according to claim 1 , wherein the aluminum or the aluminum alloy is selectively deposited in the opening portion by a chemical vapor deposition (CVD) technique to fill the opening portion with the aluminum or the aluminum alloy.

6. The semiconductor device according to claim 5 , wherein the aluminum or the aluminum alloy is deposited by thermal growth using aluminum or an aluminum alloy included in the electrode pad as a seed using a dimethyl aluminum hydride (DMAH) gas as a dilution gas.

7. The semiconductor device according to claim 5 , wherein vapor-phase grown aluminum or aluminum alloy is deposited in the opening portion using a resist mask.

8. The semiconductor device according to claim 1 , wherein the semiconductor device is configured as bottom-emission metal oxide semiconductor (MOS) type solid state imaging element.

9. The semiconductor device according to claim 1 , wherein the semiconductor device is configured as a bottom-emission metal oxide semiconductor (MOS) type solid state imaging element having a stacked structure.

10. An electronic device comprising:
a substrate made from a semiconductor material; and
layers that are made from plural types of materials and formed over the substrate,
wherein an opening portion is formed to penetrate at least a layer formed as an insulating film among the layers formed over the substrate and to expose a surface of an electrode pad filled with aluminum or an aluminum alloy,
wherein the opening portion is surrounded by organic substance material and the insulating film,
wherein the aluminum or the aluminum alloy is filled in the opening portion based on a heat resistance of the organic substrate material.

11. The electronic device according to claim 10 , wherein a wire electrically connected to the electrode pad is connected, by wire bonding, to the aluminum or the aluminum alloy with which the opening portion is filled.

12. The electronic device according to claim 10 , wherein the aluminum or the aluminum alloy with which the opening portion is filled includes a convex portion protruding from a surface of a semiconductor device of the electronic device.

13. The electronic device according to claim 12 , wherein the convex portion is pressure-bonded to another conductor electrically connected to the electrode pad, and connected to the other conductor by flip chip bonding.

14. The electronic device according to claim 10 , wherein the aluminum or the aluminum alloy is selectively deposited in the opening portion by a chemical vapor deposition (CVD) technique to fill the opening portion with the aluminum or the aluminum alloy.

15. The electronic device according to claim 14 , wherein the aluminum or the aluminum alloy is deposited by thermal growth using aluminum or an aluminum alloy included in the electrode pad as a seed using a dimethyl aluminum hydride (DMAH) gas as a dilution gas.

16. The electronic device according to claim 14 , wherein vapor-phase grown aluminum or aluminum alloy is deposited in the opening portion using a resist mask.

17. The electronic device according to claim 10 , wherein a semiconductor device of the electronic device is configured as bottom-emission metal oxide semiconductor (MOS) type solid state imaging element.

18. The electronic device according to claim 10 , wherein a semiconductor device of the electronic device is configured as a bottom-emission metal oxide semiconductor (MOS) type solid state imaging element having a stacked structure.

Assignees

• Sony Corp

Inventors

• Kameshima Takatoshi

Classifications

• H10W72/5363

  the connected ends being wedge-shaped · CPC title

• H10W72/536

  the connected ends being ball-shaped · CPC title

• H10W72/5522

  comprising gold [Au] · CPC title

• H10W72/952

  comprising metals or metalloids, e.g. PbSn, Ag or Cu · CPC title

• H10W72/29

  Bond pads specially adapted therefor · CPC title