Cylindrical-shaped nanotube field effect transistor

Patent metadata

Field	Value
Publication number	US-9224813-B2
Application number	US-201214002344-A
Country	US
Kind code	B2
Filing date	Mar 2, 2012
Priority date	Mar 2, 2011
Publication date	Dec 29, 2015
Grant date	Dec 29, 2015

Abstract

A cylindrical-shaped nanotube FET may be manufactured on silicon (Si) substrates as a ring etched into a gate stack and filled with semiconductor material. An inner gate electrode couples to a region of the gate stack inside the inner circumference of the ring. An outer gate electrode couples to a region of the gate stack outside the outer circumference of the ring. The multi-gate cylindrical-shaped nanotube FET operates in volume inversion for ring widths below 15 nanometers. The cylindrical-shaped nanotube FET demonstrates better short channel effect (SCE) mitigation and higher performance (I on /I off ) than conventional transistor devices. The cylindrical-shaped nanotube FET may also be manufactured with higher yields and cheaper costs than conventional transistors.

First claim

The invention claimed is:

1. An apparatus, comprising:
a substrate;
a core gate stack on the substrate;
a shell gate stack on the substrate, the shell gate stack being disposed around the core gate stack;
a ring of semiconductor material disposed between the core gate stack and the shell gate stack, the ring comprising a source region, a drain region, and a channel region,
a first ring of insulating material disposed between the ring of semiconductor material and the core…

Assignees

• Hussain Muhammad M
• Fahad Hossain M
• Smith Casey E
• Rojas Jhonathan P
• Univ King Abdullah Sci & Tech

Inventors

• Hussain Muhammad M
• Fahad Hossain M
• Smith Casey E
• Rojas Jhonathan P

Classifications

• H10D30/63

  Electricity · mapped topic

• H10D64/257

  Electricity · mapped topic

• H10D48/383

  Electricity · mapped topic

• H10D30/6734

  Electricity · mapped topic

• H10D30/6728

  Electricity · mapped topic