Metal gates for semiconductor devices and method thereof
US-2024429281-A1 · Dec 26, 2024 · US
Field effect transistor structure comprising a stack of vertically separated channel nanowires
US9224809B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9224809-B2 |
| Application number | US-201313896537-A |
| Country | US |
| Kind code | B2 |
| Filing date | May 17, 2013 |
| Priority date | May 17, 2012 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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Abstract
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A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20. The channel nanowires collectively comprise at least two different thicknesses and/or at least two different dopant concentrations and/or at least two different semiconductor materials.
First claim
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The invention claimed is: 1. A field effect transistor structure comprising: a source and a drain on a substrate; and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20, and where a vertical direction is substantially perpendicular to the substrate, the n vertically separated channel nanowires collectively comprising at least two different thicknesses and/or at least two differ…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9224809B2 cover?
- A field effect transistor structure comprises a source and a drain on a substrate, and a stack of n vertically separated channel nanowires isolated from the substrate and connecting the source and the drain, where n is an integer and 2≦n≦20. The channel nanowires collectively comprise at least two different thicknesses and/or at least two different dopant concentrations and/or at least two diff…
- Who is the assignee on this patent?
- Univ Illinois
- What technology area does this patent fall under?
- Primary CPC classification H10D62/121. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).