Mram device with octagon profile
US-2024135978-A1 · Apr 25, 2024 · US
Non-volatile memory devices and methods of fabricating the same
US9224784B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9224784-B2 |
| Application number | US-201414195891-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 4, 2014 |
| Priority date | Mar 12, 2013 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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Abstract
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A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically connected to the first contact, and a second information storage portion formed at a second height, which is different from the first height, from the substrate and electrically connected to the second contact.
First claim
Opening claim text (preview).
What is claimed is: 1. A nonvolatile memory device comprising: a plurality of impurity regions that are formed in a substrate; a first contact that is electrically connected to at least one of the impurity regions; a second contact that is electrically connected to at least one of the impurity regions; a first information storage portion that is formed at a first height from the substrate and electrically connected to the first contact; a second information storage portio…
Assignees
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Classifications
Electricity · mapped topic
Electricity · mapped topic
- H01L27/222Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9224784B2 cover?
- A nonvolatile memory device is provided. The nonvolatile memory device comprises a plurality of impurity regions formed in a substrate, a first contact electrically connected to at least one of the impurity regions, a second contact electrically connected to at least one of the impurity regions, a first information storage portion formed at a first height from the substrate and electrically con…
- Who is the assignee on this patent?
- Kim Whan-Kyun, Kim Young-Hyun, Kim Woo-Jin, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H01L27/222. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 29 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).