Semiconductor device and method for forming the same
US-2024395669-A1 · Nov 28, 2024 · US
US9224708B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9224708-B2 |
| Application number | US-201414339630-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 24, 2014 |
| Priority date | Jul 25, 2013 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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Official abstract text for this publication.
The invention relates to a method for producing an interconnection pad on a conducting element comprising an upper face and a side wall; the method being executed from a substrate at least the upper face of which is insulating; the conducting element going through at least an insulating portion of the substrate, the method being characterized in that it comprises the sequence of the following steps: a step of embossing the conducting element, a step of forming, above the upper insulating face of the substrate, a stack of layers comprising at least one electrically conducting layer and one electrically resistive layer, a step of partially removing the electrically resistive layer, a step of electrolytic growth on the portion of the electrically conducting layer so as to form at least one interconnection pad on said conducting element.
Opening claim text (preview).
The invention claimed is: 1. A method for producing at least one interconnection pad on a conducting element comprising an upper face and a side wall, the method being executed from a substrate at least an upper face of which is electrically insulating, the conducting element extending through a portion of the substrate, the method comprising the sequence of the following steps: a step of embossing the conducting element, so configured as to form a protrusion of the conducting ele…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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