High temperature biasable heater with advanced far edge electrode, electrostatic chuck, and embedded ground electrode
US-2024412957-A1 · Dec 12, 2024 · US
US9224626B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9224626-B2 |
| Application number | US-201213541006-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 3, 2012 |
| Priority date | Jul 3, 2012 |
| Publication date | Dec 29, 2015 |
| Grant date | Dec 29, 2015 |
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A method of forming a heater assembly for use in semiconductor processing includes thermally securing a heater substrate to an application substrate; and applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate. The application of the layered heater includes applying a first dielectric layer onto the heater substrate, applying a resistive heating layer onto the first dielectric layer, and applying a second dielectric layer onto the resistive heating layer. The heater substrate defines a material having a coefficient of thermal expansion that is matched to a coefficient of thermal expansion of at least one of the first dielectric layer and a coefficient of thermal expansion of the resistive heating layer.
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What is claimed is: 1. A method of forming a heater assembly for use in semiconductor processing comprising the following steps in sequence: thermally securing a heater substrate to an application substrate using a joining process selected from the group consisting of brazing, welding, soldering, diffusion bonding, epoxying, and vulcanizing; applying a layered heater to the heater substrate after the heater substrate is secured to the application substrate, the application of th…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Cross-Sectional Technologies · mapped topic
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