High voltage switch circuit and nonvolatile memory including the same

US9219482B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9219482-B2
Application numberUS-201414523461-A
CountryUS
Kind codeB2
Filing dateOct 24, 2014
Priority dateApr 17, 2014
Publication dateDec 22, 2015
Grant dateDec 22, 2015

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  2. Abstract

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  4. Key dates

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  5. First independent claim

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Abstract

Official abstract text for this publication.

A high voltage switch circuit includes a high voltage switch suitable for transferring a voltage of an input terminal to an output terminal in response to a voltage of a control node; a first transistor suitable for electrically connecting a first node and the control node in response to an inverted activation signal; a second transistor suitable for supplying a first high voltage to the first node in response to an activation signal; a third transistor connected in parallel to the second transistor, and operable in response to the control node; a discharge transistor suitable for discharging the control node; and a first level shifter suitable for changing a swing level of a preliminary activation signal, and generating the activation signal and the inverted activation signal.

First claim

Opening claim text (preview).

What is claimed is: 1. A high voltage switch circuit comprising: a high voltage switch suitable for transferring a voltage of an input terminal to an output terminal in response to a voltage of a control node; a first transistor suitable for electrically connecting a first node and the control node in response to an inverted activation signal; a second transistor suitable for supplying a first high voltage to the first node in response to an activation signal; a third transi…

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What does patent US9219482B2 cover?
A high voltage switch circuit includes a high voltage switch suitable for transferring a voltage of an input terminal to an output terminal in response to a voltage of a control node; a first transistor suitable for electrically connecting a first node and the control node in response to an inverted activation signal; a second transistor suitable for supplying a first high voltage to the first …
Who is the assignee on this patent?
Sk Hynix Inc
What technology area does this patent fall under?
Primary CPC classification H03K19/018521. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 22 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).