Method for forming oxide semiconductor film and method for manufacturing semiconductor device

Patent metadata

Field	Value
Publication number	US-9219159-B2
Application number	US-201213422241-A
Country	US
Kind code	B2
Filing date	Mar 16, 2012
Priority date	Mar 25, 2011
Publication date	Dec 22, 2015
Grant date	Dec 22, 2015

Abstract

A method for forming an oxide semiconductor film having favorable semiconductor characteristics is provided. In addition, a method for manufacturing a semiconductor device having favorable electric characteristics, with use of the oxide semiconductor film is provided. A method for forming an oxide semiconductor film including the steps of forming an oxide semiconductor film, forming a hydrogen permeable film over and in contact with the oxide semiconductor film, forming a hydrogen capture film over and in contact with the hydrogen permeable film, and releasing hydrogen from the oxide semiconductor film by performing heat treatment. Further, in a method for manufacturing a semiconductor device, the method for forming an oxide semiconductor film is used.

First claim

What is claimed is:

1. A method for forming a semiconductor device comprising the steps of:
forming an oxide semiconductor film which includes a region to become a channel formation region;
forming a hydrogen permeable film over the oxide semiconductor film, the hydrogen permeable film comprising silicon and oxygen;
forming a hydrogen capture film over the hydrogen permeable film, the hydrogen capture film comprising indium, oxygen, and nitrogen;
transferring hydrogen from the oxide semiconductor film to the hydrogen capture film by performing heat treatment; and
removing the hydrogen capture film and the hydrogen permeable film,
wherein the hydrogen permeable film is an insulating film.

2. The method for forming a semiconductor device according to claim 1 ,
wherein the hydrogen permeable film and the hydrogen capture film are removed after the heat treatment.

3. The method for forming a semiconductor device according to claim 1 ,
wherein the hydrogen capture film comprises a metal element included in the oxide semiconductor film, and
wherein the hydrogen permeable film does not include the metal element.

4. The method for forming a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises an In—Ga—Zn—O film,
wherein the hydrogen capture film comprises an In−Ga—Zn—O—N film.

5. The method for forming a semiconductor device according to claim 1 ,
wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

6. The method for forming a semiconductor device according to claim 1 ,
wherein a hydrogen concentration in the hydrogen capture film increases after the heat treatment, and
wherein a hydrogen concentration in the oxide semiconductor film is lower than or equal to 5×10 18 cm −3 after the heat treatment.

7. A method for forming a semiconductor device comprising the steps of:
forming an oxide semiconductor film, which includes a region to become a channel formation region;
forming a hydrogen permeable film over the oxide semiconductor film, the hydrogen permeable film comprising silicon and oxygen;
forming a hydrogen capture film over the hydrogen permeable film, the hydrogen capture film comprising indium, oxygen, and nitrogen;
transferring hydrogen from the oxide semiconductor film to the hydrogen capture film and supplying oxygen to the oxide semiconductor film from the hydrogen permeable film by performing heat treatment; and
removing the hydrogen capture film and the hydrogen permeable film,
wherein the hydrogen permeable film is an insulating film.

8. The method for forming a semiconductor device according to claim 7 ,
wherein the hydrogen permeable film and the hydrogen capture film are removed after the heat treatment.

9. The method for forming a semiconductor device according to claim 7 ,
wherein the hydrogen capture film comprises a metal element included in the oxide semiconductor film, and
wherein the hydrogen permeable film does not include the metal element.

10. The method for forming a semiconductor device according to claim 7 ,
wherein the oxide semiconductor film comprises an In—Ga—Zn—O film,
wherein the hydrogen capture film comprises an In—Ga—Zn—O—N film.

11. The method for forming a semiconductor device according to claim 7 ,
wherein a thickness of the hydrogen permeable film is less than or equal to 5 nm.

12. The method for forming a semiconductor device according to claim 7 ,
wherein a hydrogen concentration in the hydrogen capture film increases after the heat treatment, and
wherein a hydrogen concentration in the oxide semiconductor film is lower than or equal to 5×10 18 cm −3 after the heat treatment.

13. A method for forming a semiconductor device comprising the steps of:
forming a first oxide semiconductor film;
forming a hydrogen permeable film over the first oxide semiconductor film, the hydrogen permeable film comprising silicon and oxygen;
forming a hydrogen capture film over the hydrogen permeable film, the hydrogen capture film comprising indium, oxygen, and nitrogen;
transferring hydrogen from the first oxide semiconductor film to the hydrogen capture film by performing heat treatment;
removing the hydrogen capture film and the hydrogen permeable film; and
patterning the first oxide semiconductor film to form a second oxide semiconductor film which includes a region to become a channel formation region.

14. The method for forming a semiconductor device according to claim 1 ,
wherein the hydrogen capture film comprises indium nitride and one or more materials of indium oxide, gallium oxide, zinc oxide, tin oxide, aluminum oxide.

15. The method for forming a semiconductor device according to claim 7 ,
wherein the hydrogen capture film comprises indium nitride and one or more materials of indium oxide, gallium oxide, zinc oxide, tin oxide, aluminum oxide.

16. The method for forming a semiconductor device according to claim 13 ,
wherein the hydrogen capture film comprises indium nitride and one or more materials of indium oxide, gallium oxide, zinc oxide, tin oxide, aluminum oxide.

17. The method for forming a semiconductor device according to claim 1 ,
wherein the oxide semiconductor film comprises indium and zinc.

18. The method for forming a semiconductor device according to claim 7 ,
wherein the oxide semiconductor film comprises indium and zinc.

19. The method for forming a semiconductor device according to claim 13 ,
wherein the first oxide semiconductor film comprises indium and zinc.

20. The method for forming a semiconductor device according to claim 1 ,
wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.

21. The method for forming a semiconductor device according to claim 7 ,
wherein the hydrogen permeable film comprises a silicon oxide film or a silicon oxynitride film.

Assignees

• Imoto Yuki
• Maruyama Tetsunori
• Takayama Toru
• Semiconductor Energy Lab

Inventors

• Imoto Yuki
• Maruyama Tetsunori
• Takayama Toru

Classifications

• H10D30/6755 Primary

  Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate · CPC title

• H10D30/031 Primary

  of thin-film transistors [TFT] · CPC title

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H01L29/7869 Primary

  Electricity · mapped topic

• H01L29/66969

  Electricity · mapped topic