Integrated circuit with semiconductor fin fuse

Patent metadata

Field	Value
Publication number	US-9219040-B2
Application number	US-201314032484-A
Country	US
Kind code	B2
Filing date	Sep 20, 2013
Priority date	Jun 28, 2011
Publication date	Dec 22, 2015
Grant date	Dec 22, 2015

Abstract

Methods of fabricating an integrated circuit with a fin-based fuse, and the resulting integrated circuit with a fin-based fuse are provided. In the method, a fin is created from a layer of semiconductor material and has a first end and a second end. The method provides for forming a conductive path on the fin from its first end to its second end. The conductive path is electrically connected to a programming device that is capable of selectively directing a programming current through the conductive path to cause a structural change in the conductive path to increase resistance across the conductive path.

First claim

What is claimed is:

1. An integrated circuit having a fin-based fuse comprising:
a semiconductor fin having a first end and a second end;
a conductive path formed by a metal silicide from the first end of the semiconductor fin to the second end of the semiconductor fin;
first end fin portions adjacent the first end of the semiconductor fin;
second end fin portions adjacent the second end of the semiconductor fin, wherein the metal silicide covers and electrically connects t…

Assignees

• Globalfoundries Inc

Inventors

• Mann Randy W
• Maitra Kingsuk
• Mittal Anurag

Classifications

• H10W20/493 Primary

  Electricity · mapped topic

• H10W42/80 Primary

  Electricity · mapped topic

• H01L23/62 Primary

  Electricity · mapped topic

• H01L2924/0002

  Electricity · mapped topic

• H01L23/5256

  Electricity · mapped topic