GaN epitaxial growth method

Patent metadata

Field	Value
Publication number	US-9218965-B2
Application number	US-201414229285-A
Country	US
Kind code	B2
Filing date	Mar 28, 2014
Priority date	Mar 28, 2014
Publication date	Dec 22, 2015
Grant date	Dec 22, 2015

Abstract

By using a nano-scale patterning process, a dislocation defect density of a GaN epitaxy layer can be further reduced. This is because the nano-scale epitaxy structure dimension is advantageous to the reduction of the strain energy accumulated by mismatched lattices, thereby decreasing the possibility of generating defects. It is verified that the nano-scale patterning process can effectively decrease the dislocation defect density of the GaN epitaxial layer on a sapphire substrate. Considering uniformity and reproducibility on the application of the large-size wafer, the invention has utilized the soft mask NIL patterning technology to successfully implement the uniform deposition and position control of the InAs quantum dot on a GaAs substrate. This further utilizes the NIL technology in conjunction with dry-etching to perform the nano-scale patterning on a heterogeneous substrate, such as Si, sapphire or the like.

First claim

What is claimed is:

1. A gallium nitride epitaxial growth method, comprising the steps of:
(1) providing a semiconductor laminated layer or a heterogeneous substrate;
(2) forming a platform on the semiconductor laminated layer or the heterogeneous substrate to serve as a use of a flexible nano-imprint;
(3) forming a nano-pillar or a nano-hole on the semiconductor laminated layer or the heterogeneous substrate; and
(4) forming a heterogeneous epitaxy region on the semiconductor laminated layer or the heterogeneous substrate;
wherein the step (3) of forming the nano-pillar or the nano-hole comprises:
(i) using the flexible nano-imprint with a predetermined period on the semiconductor laminated layer or the heterogeneous substrate;
(ii) performing a dry-etching process once on the semiconductor laminated layer or the heterogeneous substrate to transfer print a nano-pattern; and
(iii) performing a peel off process so that the nano-pattern forms the nano-pillar or the nano-hole on the semiconductor laminated layer or the heterogeneous substrate.

2. The method according to claim 1 , wherein the semiconductor laminated layer or the heterogeneous substrate comprises an upper block and a lower block, the lower block is the platform and abuts upon the semiconductor laminated layer or an upper surface of the heterogeneous substrate; and the upper block and the semiconductor laminated layer or the heterogeneous substrate are integrally formed and continuously connected to form a patterned layer of the nano-pillar or the nano-hole.

3. The method according to claim 2 , wherein the upper block is formed by removing the semiconductor laminated layer or the heterogeneous substrate after the flexible nano-imprint is formed on a nano-photoresist layer; and the nano-photoresist layer is oxygen-plasma etched into the nano-pillar or nano-hole.

4. A gallium nitride epitaxial growth method, comprising:
providing a substrate;
forming a platform on the substrate to serve as a flexible nano-imprint;
forming a nano-pillar or hole on the substrate; and
forming a heterogeneous epitaxy region on the substrate;
wherein the substrate comprises an upper block and a lower block; the lower block abuts upon an upper surface of the substrate, the lower block is the platform of the flexible nano-imprint; and the upper block is integrally formed and is continuously connected to the substrate to form a patterned layer of the nano-pillar or hole.

5. The method according to claim 4 , wherein the substrate is a semiconductor laminated layer or a heterogeneous substrate.

6. The method according to claim 5 , wherein the platform is formed by PECVD or thermal evaporation deposition to obtain a dielectric layer and an oxide layer, then forming the flexible nano-imprint on a nano-photoresist layer, and then using an oxygen plasma to etch the nano-photoresist layer into the nano-pillar or hole.

7. The method according to claim 6 , wherein the upper block is formed by removing the dielectric layer or the oxide layer, and then dry-etching to remove the dielectric layer or the nano-pillar or hole of the oxide layer.

8. The method according to claim 7 , wherein the upper block is to transfer print the nano-pillar or hole on the substrate after dry/wet etching to remove a portion of the substrate.

9. A gallium nitride epitaxial growth method, comprising:
providing a semiconductor laminated layer or a heterogeneous substrate;
the semiconductor laminated layer or heterogeneous substrate constitute an interface contacting a gallium nitride material;
imprinting a flexible nanometer platform on the semiconductor laminated layer or the heterogeneous substrate; and
transfer printing a nano-pillar or hole, and using molecule beam epitaxy (MBE) to grow the nano-pillar or hole, formed by transfer printing the gallium nitride material, on the semiconductor laminated layer or the heterogeneous substrate.

10. The method according to claim 9 , wherein a dry/wet etching process is utilized to remove a portion of the semiconductor laminated layer or the heterogeneous substrate to obtain a gallium nitride layer with a depth of about 200 nm on the semiconductor laminated layer or the heterogeneous substrate.

Assignees

• Nat Univ Tsing Hua

Inventors

• Cheng Keh-Yung
• Wang Yu-Li
• Yang Wei-Chen
• Chiu Shao-Yen

Classifications

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/642

  Chemical etching · CPC title

• H10P50/242

  of Group IV materials · CPC title

• H10P14/276

  Lateral overgrowth · CPC title

• H10P14/271

  characterised by the preparation of substrate for selective deposition · CPC title