System and method for miniaturization of synthetic jets

US9216899B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9216899-B2
Application numberUS-201313862616-A
CountryUS
Kind codeB2
Filing dateApr 15, 2013
Priority dateAug 26, 2008
Publication dateDec 22, 2015
Grant dateDec 22, 2015

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  5. First independent claim

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Abstract

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A micro-electromechanical (MEM) synthetic jet actuator includes a semiconductor substrate having a cavity extending therethrough, such that a first opening is formed in a first surface of the semiconductor substrate and such that a second opening is formed in a second surface of the semiconductor substrate. A first flexible membrane is formed on at least a portion of the front surface of the semiconductor substrate and extends over the first opening. The first flexible membrane also includes an orifice formed therein aligned with the first opening. The MEM synthetic jet actuator also includes a second flexible membrane that is formed on at least a portion of the second surface of the semiconductor substrate and that extends over the second opening, and a pair of actuator elements coupled to the flexible membranes and aligned with the cavity to selectively cause displacement of the first and second flexible membranes.

First claim

Opening claim text (preview).

What is claimed is: 1. A cooling system-integrated circuit (IC) chip arrangement comprising: an IC chip comprising a back surface having a plurality of depressions formed therein, the IC chip including a plurality of hot spots thereon that are at an elevated temperature as compared to a surrounding region during operation of the IC chip, wherein the plurality of depressions in the back surface of the IC chip are formed at locations corresponding to the hot spots; a cooling syste…

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What does patent US9216899B2 cover?
A micro-electromechanical (MEM) synthetic jet actuator includes a semiconductor substrate having a cavity extending therethrough, such that a first opening is formed in a first surface of the semiconductor substrate and such that a second opening is formed in a second surface of the semiconductor substrate. A first flexible membrane is formed on at least a portion of the front surface of the se…
Who is the assignee on this patent?
Gen Electric
What technology area does this patent fall under?
Primary CPC classification F04B45/047. Mapped technology areas include Mechanical Engineering.
When was this patent published?
Publication date Tue Dec 22 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).