Semiconductor light emitting device including GaAs substrate

Patent metadata

Field	Value
Publication number	US-9214603-B2
Application number	US-201514603417-A
Country	US
Kind code	B2
Filing date	Jan 23, 2015
Priority date	Jan 5, 2007
Publication date	Dec 15, 2015
Grant date	Dec 15, 2015

Abstract

A semiconductor light emitting device including: a substrate made of GaAs; and a semiconductor layer formed on the substrate, in which part of the substrate on a side opposite to the semiconductor layer is removed by etching so that the semiconductor light emitting device has a thickness of not more than 60 μm.

First claim

What is claimed is:

1. A semiconductor light emitting device, comprising:
a substrate made of GaAs; and
a semiconductor layer formed on the substrate,
wherein the semiconductor light emitting device has a thickness of not more than 60 μm,
further wherein the semiconductor layer contains
a first reflecting layer disposed on the substrate,
a second reflecting layer disposed on the first reflecting layer, and
an n-type clad layer disposed on the second reflecting layer,
wherein the substrate is etched so that a thickness of the substrate in a stacking direction of the semiconductor light emitting device is reduced down to about 1 μm.

2. The semiconductor light emitting device of claim 1 , wherein
the first reflecting layer and the second reflecting layer each having a Distributed Bragg Reflector (DBR) structure that includes a plurality of stacked layers,
wherein each respective layer of the DBR structures of the first and second reflecting layers has a different composition than a composition of an adjacent layer of the DBR structures of the first and second reflecting layers that is stacked on the respective layer.

3. The semiconductor light emitting device of claim 2 , wherein the DBR structure of the first reflecting layer includes AlInP layers and GaAs layers stacked on each other.

4. The semiconductor light emitting device of claim 2 , wherein the DBR structure of the second reflecting layer includes AlInP layers and AlGaInP layers stacked on each other.

5. The semiconductor light emitting device of claim 3 , wherein the semiconductor layer further includes
a p-type clad layer, and
an electrode-side reflecting layer disposed above the p-type clad layer,
the electrode-side reflecting layer having a DBR structure which includes AlInP layers and AlGaInP layers stacked on each other.

6. The semiconductor light emitting device of claim 5 , wherein a p-side electrode covers an upper surface and side surfaces of the electrode-side reflecting layer.

7. The semiconductor light emitting device of claim 2 , wherein the DBR structure of the first reflecting layer includes Al y In 1-y P layers (0.3<=y<=0.7) and GaAs layers stacked on each other.

8. The semiconductor light emitting device of claim 7 , wherein the DBR structure of the second reflecting layer includes Al y In 1-y P layers (0.3<=y<=0.7) and (Al x Ga 1-x ) 0.5 In 0.5 P layers (0.3<=x<=0.85) stacked on each other.

9. The semiconductor light emitting device of claim 8 , wherein the semiconductor layer further includes
a p-type clad layer, and
an electrode-side reflecting layer disposed above the p-type clad layer,
the electrode-side reflecting layer having a DBR structure which includes Al y In 1-y P layers (0.3<=y<=0.7) and (Al 0.3 Ga 0.7 ) 0.5 In 0.5 P layers stacked on each other.

10. The semiconductor light emitting device of claim 9 , wherein a p-side electrode covers an upper surface and side surfaces of the electrode-side reflecting layer.

11. The semiconductor light emitting device of claim 1 , wherein the substrate, the first reflecting layer, the second reflecting layer, and the n-type clad layer are disposed in that stated order on a completely straight line that extends along the stacking direction.

Assignees

• Rohm Co Ltd

Inventors

• Hosomi Tadahiro
• Mineshita Kentaro

Classifications

• H10H20/032

  of electrodes · CPC title

• H10H20/841

  Reflective coatings, e.g. dielectric Bragg reflectors · CPC title

• H10H20/824

  comprising only Group III-V materials, e.g. GaP · CPC title

• H10H20/814 Primary

  having reflecting means, e.g. semiconductor Bragg reflectors · CPC title

• H10H20/812

  within the light-emitting regions, e.g. having quantum confinement structures · CPC title