Group III-V Device with a Selectively Modified Impurity Concentration
US-2015380497-A1 · Dec 31, 2015 · US
Compound semiconductor devices and methods for fabricating the same
US9214596B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9214596-B2 |
| Application number | US-201113880708-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 26, 2011 |
| Priority date | Oct 26, 2010 |
| Publication date | Dec 15, 2015 |
| Grant date | Dec 15, 2015 |
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Abstract
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According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so as to separate said second compound semiconductor layer of at least one layer.
First claim
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What is claimed is: 1. A method for manufacturing a compound semiconductor, the method comprising: forming a graphene-derived material layer on one of a first substrate and a first compound semiconductor layer; forming at least one layer of second compound semiconductor layers on the graphene-derived material layer; and transforming the graphene-derived material layer into a graphene oxide layer to separate at least one layer of the second compound semiconductor layers from th…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9214596B2 cover?
- According to the present invention, a method for manufacturing a compound semiconductor comprises: forming a graphene-derived material layer on either a first selected substrate or a first selected compound semiconductor layer; forming a second compound semiconductor layer of at least one layer on at least said graphene-derived material layer, and changing the graphene-derived material layer so…
- Who is the assignee on this patent?
- An Sung-Jin, Lee Dong-Gun, Kim Seok-Han, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification H10P14/2901. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).