Diode and method of making the same
US-2024355937-A1 · Oct 24, 2024 · US
Semiconductor device
US9214535B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9214535-B2 |
| Application number | US-201314023357-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 10, 2013 |
| Priority date | Sep 24, 2012 |
| Publication date | Dec 15, 2015 |
| Grant date | Dec 15, 2015 |
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- Title
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Abstract
Official abstract text for this publication.
A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the boundary region, and the diode region, the drift layer being provided on sides of the collector layer and the cathode layer opposite the first electrode. A diffusion layer of the first conductivity type is provided in the boundary region on a side of the drift layer opposite the first electrode.
First claim
Opening claim text (preview).
What is claimed is: 1. A semiconductor device, comprising: an first region provided on an electrode; a second region provided on the electrode; a first layer of a first conductivity type in the first region, the first layer being provided on a first surface side of the electrode, a second layer of a second conductivity type in the second region apart from the first layer, the second layer being provided on the first surface side of the electrode; a third layer of the secon…
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Classifications
Electricity · mapped topic
- H10D62/60Primary
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
- H10D12/411Primary
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9214535B2 cover?
- A collector layer of a first conductivity type is provided in the IGBT region and the boundary region and functions as a collector of the IGBT in the IGBT region. A cathode layer of a second conductivity type is provided in the diode region apart from the collector layer and functions as a cathode of the diode. A drift layer of the second conductivity type is provided in the IGBT region, the bo…
- Who is the assignee on this patent?
- Toshiba Kk
- What technology area does this patent fall under?
- Primary CPC classification H10D62/60. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).