Thick multilayer interference filter having a lower metal layer located within an interconnect region

Patent metadata

Field	Value
Publication number	US-9214485-B2
Application number	US-201414452702-A
Country	US
Kind code	B2
Filing date	Aug 6, 2014
Priority date	Aug 8, 2013
Publication date	Dec 15, 2015
Grant date	Dec 15, 2015

Abstract

A multilayer optical filter is provided for an integrated circuit including a substrate and a metallization layer interconnection part. The optical filter is formed from a first filter part located within the interconnection part and positioned over a photosensitive region of the substrate. The optical filter further includes a second filter part positioned above the first filter part and the interconnection part. The first and second filter parts each include a metal layer. The first and second filter parts are separated from each other as a function of a wavelength in vacuum of an optical signal to be filtered and received by the photosensitive region.

First claim

What is claimed is:

1. An integrated circuit, comprising:
a substrate;
an interconnection part; and
a multilayer optical filter;
wherein the multilayer optical filter comprises:
a first metal layer filter part within the interconnection part over a photosensitive region situated within the substrate; and
a second metal layer filter part above the first metal layer filter part and the interconnection part.

2. The integrated circuit according to claim 1 , wherein the interconnection part comprises a lower interconnection region and an upper interconnection region on top of the lower interconnection region, the first metal layer filter part comprising a lower metal layer above the photosensitive region and the lower interconnection region, and the second metal layer filter part comprises an upper metal layer above the upper interconnection region and the lower metal layer.

3. The integrated circuit according to claim 2 , wherein the first and the second metal layer filter parts each comprise a layer of copper adjacent to at least one layer of silicon nitride.

4. The integrated circuit according to claim 1 , wherein the second metal layer filter part is vertically separated from the first metal layer filter part by an optical thickness of interconnection part in a range between 0.4 and 3 times a wavelength to be filtered in vacuum.

5. The integrated circuit according to claim 1 , wherein the second metal layer filter part is vertically separated from the first metal layer filter part by an optical thickness of interconnection part in a range between 1 and 3 times a wavelength to be filtered in vacuum.

6. The integrated circuit according to claim 2 , wherein the second metal layer filter part forms a multilayer of layers having a total height above the upper interconnection region in a range between 1000 and 1500 nanometers.

7. An integrated circuit, comprising:
a substrate including a photosensitive region and a transistor;
a plurality of metallization layers on top of the substrate, the metallization layers including metal lines within an insulator, said metal lines located above the transistor but not located above the photosensitive region;
a multilayer optical filter comprising a first metal layer filter part and a second metal layer filter part;
wherein the first metal layer filter part is positioned above the plurality of metallization layers over the photosensitive region;
an insulating structure surrounding and covering the first metal layer filter part and having a top surface; and
wherein the second metal layer filter part is positioned on the top surface of the insulating structure over the first metal layer filter part.

8. The integrated circuit according to claim 7 , wherein the second metal layer filter part is vertically separated from the first metal layer filter part by a thickness in a range between 0.4 and 3 times a wavelength in vacuum of an optical signal to be filtered and received by the photosensitive region.

9. The integrated circuit according to claim 7 , wherein the second metal layer filter part is vertically separated from the first metal layer filter part by a thickness in a range between 1 and 3 times a wavelength in vacuum of an optical signal to be filtered and received by the photosensitive region.

10. The integrated circuit according to claim 7 , wherein the second metal layer filter part is formed of a multilayer of layers having a total thickness in a range between 1000 and 1500 nanometers.

11. An integrated circuit, comprising:
a substrate including a photosensitive region and a transistor;
a plurality of metallization layers on top of the substrate, the metallization layers including metal lines within an insulating structure, said metal lines located above the transistor but not located above the photosensitive region;
a multilayer optical filter comprising:
a first metal layer filter part positioned within the insulating structure and over the photosensitive region; and
a second metal layer filter part positioned above the insulating structure and in alignment with the first metal layer filter part.

12. The integrated circuit according to claim 11 , wherein the insulating structure comprises a lower interconnection region and an upper interconnection region on top of the lower interconnection region, the first metal layer filter part comprising a lower metal layer above the photosensitive region and the lower interconnection region, and the second metal layer filter part comprising an upper metal layer above the upper interconnection region and the lower metal layer of the first metal layer filter part.

13. The integrated circuit according to claim 12 , wherein the second metal layer filter part forms a multilayer of layers having a total height above the upper interconnection region in a range between 1000 and 1500 nanometers.

14. The integrated circuit according to claim 11 , wherein the first and second metal layer filter parts each comprise a layer of copper adjacent at least one layer of silicon nitride.

15. The integrated circuit according to claim 11 , wherein the second metal layer filter part is vertically separated from the first metal layer filter part by an optical thickness in a range between 0.4 and 3 times a wavelength to be filtered in vacuum.

16. The integrated circuit according to claim 11 , wherein the second metal layer filter part is vertically separated from the first metal layer filter part by an optical thickness in a range between 1 and 3 times a wavelength to be filtered in vacuum.

Assignees

• St Microelectronics Sa
• Commissariat Energie Atomique

Inventors

• Frey Laurent
• Marty Michel

Classifications

• G02B5/28

  Interference filters · CPC title

• H10F39/184

  Infrared image sensors · CPC title

• H10F39/182

  Colour image sensors · CPC title

• H10F39/811

  Interconnections · CPC title

• H10F39/024

  of coatings or optical elements · CPC title