Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus
US-2024234132-A1 · Jul 11, 2024 · US
CVD reactor with gas flow virtual walls
US9212422B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9212422-B2 |
| Application number | US-201113222840-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2011 |
| Priority date | Aug 31, 2011 |
| Publication date | Dec 15, 2015 |
| Grant date | Dec 15, 2015 |
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Abstract
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A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-reactant gas from a region laterally external to the deposition zone. The first and second gas flows are mutually pressure balanced to form the virtual walls. The virtual walls are formed by merging of gas flows at the boundary of each deposition zone. The housing has an exhaust valve to prevent pressure differences or pressure build up that would destabilize the virtual walls. Cross-contamination is reduced, between the deposition zones and the closed walls of the housing or an interior region of the housing outside the gas flow virtual walls.
First claim
Opening claim text (preview).
What is claimed is: 1. A chemical vapor deposition reactor for film formation comprising: a containment housing; and a chemical vapor deposition zone inside of the containment housing; wherein the chemical vapor deposition zone has a perimeter exhaust port with a liner at an opening thereof and is circumferentially bounded by virtual walls defined by a first radially outward gas flow of a reactant gas and a second radially inward gas flow of a non-reactant gas that merge proxi…
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Chemistry & Metallurgy · mapped topic
- C23C16/45565Primary
Chemistry & Metallurgy · mapped topic
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- What does patent US9212422B2 cover?
- A chemical vapor deposition reactor has one or more deposition zones bounded by gas flow virtual walls, within a housing having closed walls. Each deposition zone supports chemical vapor deposition onto a substrate. Virtual walls formed of gas flows laterally surround the deposition zone, including a first gas flow of reactant gas from within the deposition zone and a second gas flow of non-rea…
- Who is the assignee on this patent?
- Higashi Gregg, Lerner Alexander, Sorabji Khurshed, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification C23C16/45565. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Dec 15 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).