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Accumulation field effect microelectronic device and process for the formation thereof
US9209246B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9209246-B2 |
| Application number | US-201313934794-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jul 3, 2013 |
| Priority date | Apr 12, 2007 |
| Publication date | Dec 8, 2015 |
| Grant date | Dec 8, 2015 |
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Abstract
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A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in contact with the channel portion and overlaid in turn by a gate. A gate contact applies a gate voltage bias to control charge carrier accumulation and depletion in the underlying channel portion. This channel portion has a dimension normal to the gate which is fully depleted in the off-state. The dopant type is the same across the source, drain and the channel portion of the device. The device on-state current is determined by the doping and, unlike a MOSFET, is not directly proportional to device capacitance.
First claim
Opening claim text (preview).
The invention claimed is: 1. A gated microelectronic device comprising: an insulator substrate; a source supported on said insulator substrate, said source having a first metal contact defining a first ohmic contact interface with said source, said source having a source dopant type and a source dopant concentration and defining a source linear extent; a semiconducting drain supported on said insulator substrate, said semiconducting drain having a second metal…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9209246B2 cover?
- A gated microelectronic device is provided that has a source with a source ohmic contact with the source characterized by a source dopant type and concentration. A drain with a drain ohmic contact with the drain characterized by a drain dopant type and concentration. An intermediate channel portion characterized by a channel portion dopant type and concentration. An insulative dielectric is in …
- Who is the assignee on this patent?
- Penn State Res Found, Penn State University
- What technology area does this patent fall under?
- Primary CPC classification H10D84/83. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Dec 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).