Semiconductor device having ground shield structure and fabrication method thereof

Patent metadata

Field	Value
Publication number	US-9209130-B2
Application number	US-201314028733-A
Country	US
Kind code	B2
Filing date	Sep 17, 2013
Priority date	Oct 30, 2012
Publication date	Dec 8, 2015
Grant date	Dec 8, 2015

Abstract

Semiconductor devices having a ground shield structure and methods for their formation are provided herein. An exemplary semiconductor device can include a substrate, a ground ring, a ground shield, an electronic device, and/or an insulation layer. The ground ring can be disposed over the substrate. The ground shield can be disposed over the substrate and surrounded by the ground ring. The ground shield can include a plurality of coaxial conductive wirings and a metal wire passing through the plurality of coaxial conductive wirings along a radial direction. The metal wire can be connected to the ground ring. The electronic device can be disposed over the ground shield. The insulation layer can be disposed between the ground shield and the electronic device.

First claim

What is claimed is:

1. A semiconductor device having a ground shield comprising:
a substrate;
a ground ring disposed over the substrate;
a ground shield disposed over the substrate and surrounded by the ground ring, wherein the ground shield includes a plurality of coaxial conductive wirings and a metal wire passing through the plurality of coaxial conductive wirings along a radial direction, and the metal is connected to the ground ring,
wherein the ground shield includes…

Assignees

• Semiconductor Mfg Int Shanghai

Inventors

• Cheng Jenhao
• Wang Xining
• Liu Ling

Classifications

• H10W42/20

  Electricity · mapped topic

• H10W20/423

  Electricity · mapped topic

• H10W44/234

  Electricity · mapped topic

• H10W44/20

  Electricity · mapped topic

• H10W20/497 Primary

  Electricity · mapped topic