Structure and production process of a microelectronic 3D memory device of flash NAND type
US-9053976-B2 · Jun 9, 2015 · US
Neuromorphic system exploiting the intrinsic characteristics of memory cells
US9208434B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9208434-B2 |
| Application number | US-201314038197-A |
| Country | US |
| Kind code | B2 |
| Filing date | Sep 26, 2013 |
| Priority date | Sep 26, 2012 |
| Publication date | Dec 8, 2015 |
| Grant date | Dec 8, 2015 |
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Abstract
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A neuromorphic system comprises a set of at least one input neuron, a set of at least one output neuron and a synaptic network formed from a set of at least one variable-resistance memristive component, said synaptic network connecting at least one input neuron to at least one output neuron, the resistance of the at least one memristive component being adjusted by delivering to the synaptic network write pulses generated by the at least one input neuron, and return pulses generated by the at least one output neuron, the characteristics of the write and return pulses being deduced from the intrinsic characteristics of the at least one memristive component so that the combination of a write pulse and a return pulse in the at least one memristive component results in a modification of its resistance according to a learning rule chosen beforehand.
First claim
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The invention claimed is: 1. A neuromorphic system comprising a set of at least one input neuron, a set of at least one output neuron and a synaptic network formed from a set of at least one variable-resistance memristive component, said synaptic network connecting at least one input neuron to at least one output neuron, the resistance of the at least one memristive component being adjusted by delivering to the synaptic network write pulses generated by the at least one input neur…
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- What does patent US9208434B2 cover?
- A neuromorphic system comprises a set of at least one input neuron, a set of at least one output neuron and a synaptic network formed from a set of at least one variable-resistance memristive component, said synaptic network connecting at least one input neuron to at least one output neuron, the resistance of the at least one memristive component being adjusted by delivering to the synaptic net…
- Who is the assignee on this patent?
- Commissariat Energie Atomique, Centre Nat Rech Scient, Centre Nat Rech Scient
- What technology area does this patent fall under?
- Primary CPC classification G06N3/08. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Dec 08 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).