Light-emitting diode device

US9203003B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9203003-B2
Application numberUS-201313796044-A
CountryUS
Kind codeB2
Filing dateMar 12, 2013
Priority dateMar 12, 2012
Publication dateDec 1, 2015
Grant dateDec 1, 2015

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A light-emitting diode device comprises a substrate; a plurality of LED units formed on the substrate, each LED unit including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; and a first sidewall with a length of A microns; and a plurality of conductive connecting structures, spatially separated from each other, wherein one end of the conductive connecting structure are formed on the first sidewall of one of the LED units, and a spacing between two adjacent conductive connecting structures is less than 100 microns; wherein each conductive connecting structure comprises a first extending part formed on one LED unit and a second extending part formed on the adjacent LED unit, wherein lengths of the first and the second extending parts are different; wherein a number of the conductive connecting structures is an integer larger than (A/100)−1.

First claim

Opening claim text (preview).

What is claimed is: 1. A light-emitting diode device, comprising: a substrate including a first surface; a plurality of light-emitting diode units formed on the first surface, wherein each of the light-emitting diode units comprises: a first semiconductor layer; a second semiconductor layer formed on the first semiconductor layer; an active layer formed between the first semiconductor layer and the second semiconductor layer; and a first sidewall with a length of A micro…

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What does patent US9203003B2 cover?
A light-emitting diode device comprises a substrate; a plurality of LED units formed on the substrate, each LED unit including a first semiconductor layer, a second semiconductor layer formed on the first semiconductor layer, and an active layer formed therebetween; and a first sidewall with a length of A microns; and a plurality of conductive connecting structures, spatially separated from eac…
Who is the assignee on this patent?
Epistar Corp
What technology area does this patent fall under?
Primary CPC classification H10H29/14. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Dec 01 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).