RFID tags based on self-assembly nanoparticles

Patent metadata

Field	Value
Publication number	US-9202924-B2
Application number	US-201414147594-A
Country	US
Kind code	B2
Filing date	Jan 6, 2014
Priority date	Jan 11, 2013
Publication date	Dec 1, 2015
Grant date	Dec 1, 2015

Abstract

A semiconductor device comprising a gate electrode; an insulating layer in electrical connection with the gate electrode; a source electrode and a drain electrode; and a semiconducting channel layer configured to selectively allow electrically connection between the source electrode and the drain electrode based on the voltage on the gate electrode; wherein the semiconducting channel layer comprises metal nanoparticles; and the semiconducting channel layer is in contact with the source electrode, the drain electrode and the insulating layer. A method of manufacturing the semiconductor device of the present invention is also disclosed.

First claim

What is claimed is:

1. A semiconductor device comprising
a) a gate electrode;
b) an insulating layer in electrical connection with said gate electrode;
c) a source electrode and a drain electrode; and
d) a semiconducting channel layer configured to selectively allow electrically connection between said source electrode and said drain electrode based on the voltage on said gate electrode;
wherein said semiconducting channel layer comprises metal nanoparticles and metal oxide nanoparticles; wherein said semiconducting channel layer is in contact with said source electrode, said drain electrode and said insulating layer; and wherein said metal nanoparticles are selected from a group consisting of Au, Ag, Pd, Pt and any combinations thereof and said metal oxide nanoparticles are selected from a group of ZnO and CuO; wherein said metal nanoparticles and said metal oxide nanoparticles form an array of self-assembly nanostructure; wherein said array of self-assembly nanostructure forms a monolayer.

2. The semiconductor device according to claim 1 , wherein said semiconductor device is a thin film transistor of an inverter used in a ring oscillator of an RFID tag.

3. A method of manufacturing a semiconductor device comprising the steps of:
a) providing a nanoparticle solution comprising metal nanoparticles and metal oxide nanoparticles;
b) allowing said nanoparticles to undergo self-assembly to form a 2D self-assembled nanoparticles monolayer on said nanoparticle solution;
c) forming said array of nanoparticles onto a substrate to form a semiconducting channel layer; and
d) forming source and drain electrodes in contact with said semiconducting channel layer;

wherein said metal nanoparticles are selected from the group consisting of Au, Ag, Pd, Pt and any combinations thereof; and wherein said metal oxide nanoparticles are selected from a group consisting of ZnO and CuO.

4. The semiconductor device of claim 1 , wherein said metal oxide nanoparticles are CuO.

5. The method of manufacturing a semiconductor device of claim 3 , wherein said metal oxide nanoparticles are CuO.

6. The method of manufacturing a semiconductor device of claim 3 further comprises the step of preparing a nanoparticle solution comprising H 2 PdCl 4 , L-ascorbic acid and PVP.

Assignees

• Nano & Advanced Materials Inst Ltd

Inventors

• Vellaisamy Arul Lenus Roy
• Zhou Ye
• Han Su Ting
• Xu Zong Xiang

Classifications

• H10D99/00

  Subject matter not provided for in other groups of this subclass · CPC title

• H10D62/235

  of IGFETs (IGFETs having buried channels H10D30/637) · CPC title

• H10D62/118

  Nanostructure semiconductor bodies · CPC title

• H10D62/80

  characterised by the materials · CPC title

• H10D30/6757

  characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile (TFTs having channel structures for preventing kink or snapback effects H10D30/6708; TFTs having lightly-doped source or drain extensions H10D30/6715) · CPC title