Efficient high voltage switching circuits and monolithic integration of same
US-9219058-B2 · Dec 22, 2015 · US
US9202811B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9202811-B2 |
| Application number | US-201314073783-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 6, 2013 |
| Priority date | Dec 18, 2012 |
| Publication date | Dec 1, 2015 |
| Grant date | Dec 1, 2015 |
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In an exemplary implementation, an integrated assembly includes a printed circuit board, and a depletion mode III-Nitride transistor die and a group IV transistor die coupled to the printed circuit board. The depletion mode III-Nitride transistor die is situated on one side of the printed circuit board and the group IV transistor die is situated on an opposing side of the printed circuit board. At least one via in the printed circuit board electrically connects the depletion mode III-Nitride transistor die to the group IV transistor die. In some implementations, the depletion mode III-Nitride transistor die is in cascode with the group IV transistor die. Furthermore, the depletion mode III-Nitride transistor die can be situated over the group IV transistor die.
Opening claim text (preview).
The invention claimed is: 1. An integrated assembly comprising: a printed circuit board; a depletion mode III-Nitride transistor die and a group IV transistor die coupled to said printed circuit board; said depletion mode HI-Nitride transistor die situated on one side of said printed circuit board and said group IV transistor die situated on an opposing side of said printed circuit board; at least one via in said printed circuit board electrically connecting said depletion…
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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