Mitigation of parasitic capacitance
US-9086768-B2 · Jul 21, 2015 · US
US9201547B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9201547-B2 |
| Application number | US-201213460620-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 30, 2012 |
| Priority date | Apr 30, 2012 |
| Publication date | Dec 1, 2015 |
| Grant date | Dec 1, 2015 |
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A touch sensor panel configured to detect objects touching the panel as well as objects that are at a varying proximity to the touch sensor panel. The touch sensor panel includes circuitry that can configure the panel in a mutual capacitance (near field) architecture or a self-capacitance (far field and super far field) architecture. The touch sensor panel can also include circuitry that works to minimize an effect that a parasitic capacitance can have on the ability of the touch sensor panel to reliably detect touch and proximity events.
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What is claimed is: 1. A method of sensing proximity events, comprising: configuring a touch sensor panel to a self-capacitance architecture; stimulating the touch sensor panel with one or more stimulation signals to generate one or more touch signals; reducing an effect of a parasitic capacitance on the one or more touch signals received from the touch sensor panel by driving a shield with a shield signal of a same frequency and phase as the one or more stimulation signals,…
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