Semiconductor device

Patent metadata

Field	Value
Publication number	US-9201439-B2
Application number	US-201313751326-A
Country	US
Kind code	B2
Filing date	Jan 28, 2013
Priority date	Mar 13, 2012
Publication date	Dec 1, 2015
Grant date	Dec 1, 2015

Abstract

A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.

First claim

What is claimed is:

1. A semiconductor device comprising:
a booster circuit that boosts an input voltage and generates a first boosted voltage;
a voltage hold circuit that holds a second boosted voltage having a smaller absolute value than the first boosted voltage;
a first output terminal through which the first boosted voltage is output;
a second output terminal through which the second boosted voltage is output;
a first switch that is placed between the first output ter…

Assignees

• Renesas Electronics Corp

Inventors

• Yamashiro Masao
• Bando Tatsuya
• Kamada Kunitoshi
• Sato Hiroshi

Classifications

• G05F1/625 Primary

  Physics · mapped topic

• H03K5/00006

  Electricity · mapped topic

• H02M3/075

  Electricity · mapped topic

• G11C7/10

  Physics · mapped topic

• G11C16/30

  Physics · mapped topic