Solid state imaging device
US-RE49928-E · Apr 16, 2024 · US
Solid-state imaging device and driving method of solid-state imaging device
US9197830B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9197830-B2 |
| Application number | US-201414167746-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 29, 2014 |
| Priority date | Aug 8, 2011 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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Abstract
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A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; charge accumulating regions of an n-type each (i) formed in the epilayer to correspond to one of the pixel electrodes, (ii) electrically connected to the one corresponding pixel electrode, and (iii) accumulating signal charges generated by the photoelectric converting film through the photo-electrically conversion; charge barrier regions of a p-type each formed in the epilayer to contact a bottom of a corresponding one of the charge accumulating regions; and charge draining regions of an n-type each formed in the epilayer to contact a bottom of a corresponding one of the charge barrier regions.
First claim
Opening claim text (preview).
The invention claimed is: 1. A solid-state imaging device comprising: a substrate; a first electrode formed above the substrate; a photoelectric converting film formed above the first electrode and converting light into signal charges; a second electrode formed on the photoelectric converting film; a charge accumulating unit formed on the substrate, electrically connected to the first electrode, and configured to accumulate charges flowing from the first electrode; a re…
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Classifications
Electricity · mapped topic
- H04N25/767Primary
Electricity · mapped topic
Electricity · mapped topic
- H04N25/616Primary
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9197830B2 cover?
- A solid-state imaging device includes: an epilayer; pixel electrodes; a photoelectric converting film formed above the pixel electrodes and converting incident light into electric signals; a transparent electrode formed on the photoelectric converting film; charge accumulating regions of an n-type each (i) formed in the epilayer to correspond to one of the pixel electrodes, (ii) electrically co…
- Who is the assignee on this patent?
- Panasonic Corp, Panasonic Ip Man Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H04N25/767. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).