Power storage device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9196906-B2
Application number	US-201313792612-A
Country	US
Kind code	B2
Filing date	Mar 11, 2013
Priority date	Mar 23, 2012
Publication date	Nov 24, 2015
Grant date	Nov 24, 2015

Abstract

A power storage device is reduced in weight. A metal sheet serving as a negative electrode current collector is separated and another negative electrode current collector is formed. For example, through the step of forming silicon serving as a negative electrode active material layer over a titanium sheet and then performing heating, the titanium sheet can be separated. Then, another negative electrode current collector with a thickness of more than or equal to 10 nm and less than or equal to 1 μm is formed. Thus, light weight of the power storage device can be achieved.

First claim

What is claimed is:

1. A method for manufacturing a power storage device, comprising the steps of:
forming a negative electrode active material layer over a metal sheet;
forming an electrolyte layer over the negative electrode active material layer;
forming a positive electrode active material layer over the electrolyte layer;
forming a positive electrode current collector over the positive electrode active material layer;
heating the negative electrode active material layer and the metal sheet;
separating the metal sheet from the negative electrode active material layer; and
forming a negative electrode current collector on a surface of the negative electrode active material layer from which the metal sheet is separated.

2. The method for manufacturing a power storage device according to claim 1 ,
wherein the negative electrode current collector has a thickness of more than or equal to 10 nm and less than or equal to 1 μm.

3. The method for manufacturing a power storage device according to claim 1 ,
wherein the negative electrode active material layer is a silicon film.

4. The method for manufacturing a power storage device according to claim 3 ,
wherein the silicon film comprises a whisker-like surface.

5. The method for manufacturing a power storage device according to claim 1 ,
wherein a material of the negative electrode current collector is different from a material of the metal sheet.

6. The method for manufacturing a power storage device according to claim 1 ,
wherein the negative electrode current collector comprises any one of aluminum, stainless steel, nickel, copper, tin, niobium, iron, and titanium.

7. The method for manufacturing a power storage device according to claim 1 ,
wherein the electrolyte layer comprises an inorganic solid electrolyte layer or an organic solid electrolyte layer.

8. The method for manufacturing a power storage device according to claim 1 ,
wherein the positive electrode active material layer comprises any one of LiFePO 4 , LiNiPO 4 , LiCoPO 4 , and LiMnPO 4 .

9. The method for manufacturing a power storage device according to claim 1 ,
wherein the negative electrode current collector, the negative electrode active material layer, the electrolyte layer, the positive electrode active material layer, and the positive electrode current collector are covered with a protective film.

10. The method for manufacturing a power storage device according to claim 1 , further comprising a step of fixing a resin substrate to the positive electrode current collector.

11. A method for manufacturing a power storage device, comprising the steps of:
forming a negative electrode active material layer over a metal sheet;
forming an electrolyte layer over the negative electrode active material layer;
forming a positive electrode active material layer over the electrolyte layer;
forming a positive electrode current collector over the positive electrode active material layer;
forming a protective film over the positive electrode current collector;
heating the negative electrode active material layer and the metal sheet;
separating the metal sheet from the negative electrode active material layer; and
forming a negative electrode current collector on a surface of the negative electrode active material layer from which the metal sheet is separated.

12. The method for manufacturing a power storage device according to claim 11 ,
wherein the negative electrode current collector has a thickness of more than or equal to 10 nm and less than or equal to 1 μm.

13. The method for manufacturing a power storage device according to claim 11 ,
wherein the negative electrode active material layer is a silicon film.

14. The method for manufacturing a power storage device according to claim 13 ,
wherein the silicon film comprises a whisker-like surface.

15. The method for manufacturing a power storage device according to claim 11 ,
wherein a material of the negative electrode current collector is different from a material of the metal sheet.

16. The method for manufacturing a power storage device according to claim 11 ,
wherein the negative electrode current collector comprises any one of aluminum, stainless steel, nickel, copper, tin, niobium, iron, and titanium.

17. The method for manufacturing a power storage device according to claim 11 ,
wherein the electrolyte layer comprises an inorganic solid electrolyte layer or an organic solid electrolyte layer.

18. The method for manufacturing a power storage device according to claim 11 ,
wherein the positive electrode active material layer comprises any one of LiFePO 4 , LiNiPO 4 , LiCoPO 4 , and LiMnPO 4 .

Assignees

• Semiconductor Energy Lab

Inventors

• Kuriki Kazutaka
• Oguni Teppei

Classifications

• H01M4/661

  Metal or alloys, e.g. alloy coatings (H01M4/669 take precedence) · CPC title

• H01M10/052

  Li-accumulators · CPC title

• H01M10/058

  Construction or manufacture · CPC title

• H01M4/04

  Processes of manufacture in general · CPC title

• H01M10/0585

  of accumulators having only flat construction elements, i.e. flat positive electrodes, flat negative electrodes and flat separators · CPC title