Magnetoresistive effect element

Patent metadata

Field	Value
Publication number	US-9196823-B2
Application number	US-201314019415-A
Country	US
Kind code	B2
Filing date	Sep 5, 2013
Priority date	Sep 21, 2012
Publication date	Nov 24, 2015
Grant date	Nov 24, 2015

Abstract

A magnetoresistive effect element includes the following structure. A first ferromagnetic layer has a variable magnetization direction. A second ferromagnetic layer has an invariable magnetization direction. A tunnel barrier layer is formed between the first and second ferromagnetic layers. An energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnetic layer and the tunnel barrier layer. The second ferromagnetic layer contains a main component and an additive element. The main component contains at least one of Fe, Co, and Ni. The additive element contains at least one of Mg, Al, Ca, Sc, Ti, V, Mn, Zn, As, Sr, Y, Zr, Nb, Cd, In, Ba, La, Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, Lu, Hf, Ta, and W.

First claim

What is claimed is:

1. A magnetoresistive effect element comprising:
a first ferromagnetic layer having a variable magnetization direction;
a second ferromagnetic layer having an invariable magnetization direction; and
a tunnel barrier layer formed between the first ferromagnetic layer and the second ferromagnetic layer,
wherein an energy barrier between the first ferromagnetic layer and the tunnel barrier layer is higher than an energy barrier between the second ferromagnet…

Assignees

• Toshiba Kk

Inventors

• Nagamine Makoto
• Ikeno Daisuke
• Ueda Koji
• Nishiyama Katsuya
• Natori Katsuaki
• Yamakawa Koji

Classifications

• G11C11/161 Primary

  Physics · mapped topic

• H01L43/02 Primary

  Electricity · mapped topic

• H01L43/08

  Electricity · mapped topic

• H01L43/10

  Electricity · mapped topic

• H10N50/85

  Electricity · mapped topic