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Semiconductor light emitting device and semiconductor light emitting apparatus having the same
US9196812B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9196812-B2 |
| Application number | US-201414543481-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 17, 2014 |
| Priority date | Dec 17, 2013 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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Abstract
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In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second one of first openings that respectively expose the first and second conductivity-type semiconductor layers. The barrier metal layer is on the first insulating layer and electrically connected to the first and second conductivity-type semiconductor layers through the first and second one of the first openings. The second insulating layer is on the barrier metal layer and defines a second opening that partially exposes the barrier metal layer. The electrode is on the barrier metal layer and electrically connected to the first and second conductivity-type semiconductor layers through the barrier metal layer.
First claim
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What is claimed is: 1. A semiconductor light emitting device comprising: a light emitting structure, the light emitting structure including a first conductivity-type semiconductor layer, an active layer on the first conductivity-type semiconductor layer, and a second conductivity-type semiconductor layer on the active layer; a first insulating layer on the light emitting structure, the first insulating layer defining a plurality of first openings, a first one of the plurality of…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US9196812B2 cover?
- In example embodiments, a semiconductor light emitting device includes a light emitting structure, first and second insulating layers, a barrier metal layer, and an electrode. The light emitting structure includes an active layer between a first and second conductivity-type semiconductor layer. The first insulating layer is on the light emitting structure and defines a first one and a second on…
- Who is the assignee on this patent?
- Samsung Electronics Co Ltd
- What technology area does this patent fall under?
- Primary CPC classification H10H20/819. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).