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Vertical solid-state transducers having backside terminals and associated systems and methods
US9196810B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9196810-B2 |
| Application number | US-201313863625-A |
| Country | US |
| Kind code | B2 |
| Filing date | Apr 16, 2013 |
| Priority date | Aug 25, 2011 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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Abstract
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Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor materials. The SST can further include first and second contacts electrically coupled to the first and second semiconductor materials, respectively. A portion of the first contact can be covered by a dielectric material, and a portion can remain exposed through the dielectric material. A conductive carrier substrate can be disposed on the dielectric material. An isolating via can extend through the conductive carrier substrate to the dielectric material and surround the exposed portion of the first contact to define first and second terminals electrically accessible from the first side.
First claim
Opening claim text (preview).
We claim: 1. A solid-state transducer (SST) having a first side and a second side facing away from the first side, comprising: a transducer structure having a first semiconductor material at the first side of the SST, a second semiconductor material at the second side of the SST, and an active region between the first and second semiconductor materials; a first contact on the first side of the SST and electrically coupled to the first semiconductor material, wherein the first co…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9196810B2 cover?
- Vertical solid-state transducers (“SSTs”) having backside contacts are disclosed herein. An SST in accordance with a particular embodiment can include a transducer structure having a first semiconductor material at a first side of the SST, a second semiconductor material at a second side of the SST opposite the first side, and an active region between the first and second semiconductor material…
- Who is the assignee on this patent?
- Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H10H20/857. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).