High-efficiency photovoltaic back-contact solar cell structures and manufacturing methods

Patent metadata

Field	Value
Publication number	US-9196759-B2
Application number	US-201514629273-A
Country	US
Kind code	B2
Filing date	Feb 23, 2015
Priority date	Dec 9, 2009
Publication date	Nov 24, 2015
Grant date	Nov 24, 2015

Abstract

Back contact back junction solar cell and methods for manufacturing are provided. The back contact back junction solar cell comprises a substrate having a light capturing frontside surface with a passivation layer, a doped base region, and a doped backside emitter region with a polarity opposite the doped base region. A backside passivation layer and patterned reflective layer on the emitter form a light trapping backside mirror. An interdigitated metallization pattern is positioned on the backside of the solar cell and a permanent reinforcement provides support to the cell.

First claim

What is claimed is:

1. A back contact back junction thin solar cell, comprising:
a deposited semiconductor layer, comprising:
a light capturing frontside surface with a passivation layer,
a doped base region, and
a doped backside emitter region with a polarity opposite said doped base region;

a backside passivation dielectric layer and patterned reflective layer on said backside emitter region, wherein said backside passivation dielectric layer and said patterned reflective layer form a light trapping backside mirror;
backside emitter contacts and backside base contacts connected to metal interconnects forming an interdigitated metallization pattern on the backside of said back contact back junction thin solar cell; and
a backside reinforcement on the backside of said back contact back junction thin solar cell, said backside reinforcement having access openings providing access to said metal interconnects.

2. The back contact back junction thin solar cell of claim 1 , wherein said deposited semiconductor layer is an epitaxial silicon layer with a thickness in the range of 15 to 50 microns.

3. The back contact back junction thin solar cell of claim 1 , wherein said deposited semiconductor layer is a planar epitaxial silicon layer.

4. The back contact back junction thin solar cell of claim 1 , wherein said light capturing frontside surface with a passivation layer serves as an anti-reflection coating.

5. The back contact back junction thin solar cell of claim 1 , wherein said light capturing frontside surface with a passivation layer provides field assisted passivation.

6. The back contact back junction thin solar cell of claim 1 , wherein said doped backside emitter region is an in-situ doped epitaxial emitter region with an emitter junction thickness of less than 3 microns.

7. The back contact back junction thin solar cell of claim 1 , wherein said interdigitated metallization pattern is a distributed array of interdigitated fingers and busbars.

8. The back contact back junction thin solar cell of claim 1 , wherein higher concentration base doping regions under said backside base contacts are separated from emitter regions, thereby forming separated junctions.

9. The back contact back junction thin solar cell of claim 1 , wherein higher concentration base doping under said backside base contacts abut emitter regions, thereby forming abutted junctions.

10. The back contact back junction thin solar cell of claim 1 , wherein said mirror is a lambertian mirror.

11. The back contact back junction thin solar cell of claim 1 , wherein the localized doping concentrations under said emitter contact are higher than said doped backside emitter region, thereby forming selective emitter contacts.

12. The back contact back junction thin solar cell of claim 1 , wherein said backside reinforcement is a permanent support reinforcement plate and said access openings are through-hole openings.

13. The back contact back junction thin solar cell of claim 1 , wherein said backside passivation dielectric layer is aluminum oxide.

14. The back contact back junction thin solar cell of claim 1 , wherein said backside reinforcement is a permanent support reinforcement plate and said access openings are through-hole openings.

15. The back contact back junction thin solar cell of claim 1 , wherein said backside reinforcement is a backside grid-shaped support reinforcement.

16. The back contact back junction thin solar cell of claim 1 , wherein said dopes backside emitter region is a doped backside epitaxial region.

Assignees

• Solexel Inc

Inventors

• Moslehi Mehrdad M
• Kapur Pawan
• Kramer Karl-Josef
• Wang David Xuan-Qi
• Seutter Sean M
• Rana Virendra V
• Calcaterra Anthony
• Van Kerschaver Emmanuel

Classifications

• H10F77/1692

  the films including only Group IV materials · CPC title

• H10F77/937

  Busbar structures for modules · CPC title

• H10F77/703

  of the semiconductor bodies, e.g. textured active layers · CPC title

• H10F77/311

  for photovoltaic cells · CPC title

• H10F77/227

  for emitter wrap-through [EWT] photovoltaic cells, e.g. interdigitated emitter-base back-contacts · CPC title