Low power non-volatile non-charge-based variable supply RFID tag memory
US-11989606-B2 · May 21, 2024 · US
US9196378B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9196378-B2 |
| Application number | US-201414509852-A |
| Country | US |
| Kind code | B2 |
| Filing date | Oct 8, 2014 |
| Priority date | Apr 24, 2014 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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A semiconductor memory device includes a fuse array block including a plurality of fuses programmed with state information, an operation direction control block suitable for controlling a program operation direction and a boot-up operation direction of the fuse array block, and a fuse information loading block suitable for loading the state information which is programmed in the plurality of fuses of the fuse array block through the boot-up operation.
Opening claim text (preview).
What is claimed is: 1. A semiconductor memory device, comprising: a fuse array block including a plurality of fuses programmed with state information; an operation direction control block suitable for controlling a program operation direction and a boot-up operation direction of the fuse array block; and a fuse information loading block suitable for loading the state information which is programmed in the plurality of fuses of the fuse array block through the boot-up operation…
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