Method for fabricating semiconductor device
US-2016358768-A1 · Dec 8, 2016 · US
Resist underlayer composition, method of forming patterns and semiconductor integrated circuit device including the patterns
US9195136B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9195136-B2 |
| Application number | US-201314088509-A |
| Country | US |
| Kind code | B2 |
| Filing date | Nov 25, 2013 |
| Priority date | Apr 25, 2013 |
| Publication date | Nov 24, 2015 |
| Grant date | Nov 24, 2015 |
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Abstract
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A resist underlayer composition, a method of forming patterns, and semiconductor integrated circuit device, the composition including a solvent; and a compound including a moiety represented by the following Chemical Formula 1:
First claim
Opening claim text (preview).
What is claimed is: 1. A resist underlayer composition, comprising: a solvent; and a compound including a moiety represented by the following Chemical Formula 1: wherein, in Chemical Formula 1, A 1 and A 2 are each independently one selected from the following Group 1, B 1 is one selected from the following Group 2, and R 1 and R 2 are ea…
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Classifications
- G03F7/092Primary
Physics · mapped topic
Physics · mapped topic
- G03F7/0045Primary
Physics · mapped topic
Physics · mapped topic
Physics · mapped topic
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- What does patent US9195136B2 cover?
- A resist underlayer composition, a method of forming patterns, and semiconductor integrated circuit device, the composition including a solvent; and a compound including a moiety represented by the following Chemical Formula 1:
- Who is the assignee on this patent?
- Kwon Hyo-Young, Kim Min-Gyum, Lee Jun-Ho, and 2 more
- What technology area does this patent fall under?
- Primary CPC classification G03F7/092. Mapped technology areas include Physics.
- When was this patent published?
- Publication date Tue Nov 24 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).