Silicon carbide semiconductor device and method for manufacturing the same
US-9224645-B2 · Dec 29, 2015 · US
Method of production of SiC semiconductor device
US9190482B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-9190482-B2 |
| Application number | US-201213599010-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 30, 2012 |
| Priority date | Sep 7, 2011 |
| Publication date | Nov 17, 2015 |
| Grant date | Nov 17, 2015 |
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Abstract
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A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, then forming the ohmic electrode the gettering layer outward from the substrate.
First claim
Opening claim text (preview).
The invention claimed is: 1. A method of production of an SiC semiconductor device, comprising: forming a gettering layer in an SiC layer by implanting, into a region of the SiC layer, ions having little effect on a conductivity of the region of the SiC layer, the gettering layer having a defect density higher than a defect density of the SiC layer and being parallel to a surface of the SiC layer, wherein the ions are selected from a group consisting of Si, C, H, and a rare gas; a…
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Classifications
- H10D64/0115Primary
Electricity · mapped topic
Electricity · mapped topic
- H10D12/031Primary
Electricity · mapped topic
- H01L29/66068Primary
Electricity · mapped topic
Electricity · mapped topic
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- What does patent US9190482B2 cover?
- A method of production of an SiC semiconductor device, which can form an ohmic electrode while preventing electrode metal from diffusing in the SiC single crystal substrate, includes a step of forming an ohmic electrode on an SiC substrate, characterized by forming a gettering layer with a defect density higher than the SiC substrate on that substrate to be parallel with the substrate surface, …
- Who is the assignee on this patent?
- Danno Katsunori, Kimoto Tsunenobu, Toyota Motor Co Ltd, and 1 more
- What technology area does this patent fall under?
- Primary CPC classification H10D64/0115. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Nov 17 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).