Reflective optical imaging system

Patent metadata

Field	Value
Publication number	US-9188771-B2
Application number	US-201113313641-A
Country	US
Kind code	B2
Filing date	Dec 7, 2011
Priority date	Dec 8, 2010
Publication date	Nov 17, 2015
Grant date	Nov 17, 2015

Abstract

An optical imaging system serving for imaging a pattern arranged in an object plane of the imaging system into an image plane of the imaging system with the aid of electromagnetic radiation from a wavelength range around a main wavelength λ 0 has a multiplicity of mirrors. Each mirror has a mirror surface having a reflective layer arrangement having a sequence of individual layers.

First claim

What is claimed is:

1. An optical imaging system configured to image a pattern arranged in an object plane of the imaging system into an image plane of the imaging system via electromagnetic radiation having a wavelength range around a main wavelength λ 0 , the optical system comprising:
a plurality of mirrors,
wherein:
each mirror has a mirror surface comprising a reflective layer arrangement having a sequence of individual layers;
each mirror surface is arranged in a beam path between the object plane and the image plane so that, during use of the optical imaging system, each reflective layer arrangement is irradiated from an angle of incidence range characteristic of the mirror and to generate an average phase <PHI>(AOI)=(PHI p +PHI s )/2 for each ray impinging at an angle of incidence AOI, where PHI p is a phase for a p polarized radiation component and PHI s is a phase for an s polarized radiation component;
the wavelength range has a wavelength bandwidth Δλ of at least 0.25 nm measured between a lower secondary wavelength λ min <λ 0 and an upper secondary wavelength λ max <λ 0 ; and
at least one mirror has an angle of incidence interval of more than 8° and also has a phase optimized layer arrangement in which, for each angle of incidence of the angle of incidence interval, a relative average phase for each wavelength within the wavelength bandwidth deviates by a maximum of 25° from a relative average phase at the main wavelength.

2. The optical imaging system of claim 1 , wherein a mirror having a largest angle of incidence range has a phase optimized layer arrangement in which, for each angle of incidence of the angle of incidence interval, a relative average phase for each wavelength within the wavelength bandwidth deviates by a maximum of 25° from a relative average phase at the main wavelength.

3. The optical imaging system of claim 1 , wherein only a mirror having a largest angle of incidence range has a phase optimized layer arrangement in which, for each angle of incidence of the angle of incidence interval, a relative average phase for each wavelength within the wavelength bandwidth deviates by a maximum of 25° from a relative average phase at the main wavelength.

4. The optical imaging system of claim 1 , wherein a mirror having a maximum angle of incidence of at least 22° and at which the angle of incidence range has a bandwidth of at least 10° has a phase optimized layer arrangement in which, for each angle of incidence of the angle of incidence interval, a relative average phase for each wavelength within the wavelength bandwidth deviates by a maximum of 25° from a relative average phase at the main wavelength.

5. The optical imaging system of claim 1 , wherein:
the phase optimized layer arrangement has a plurality of periodic layer subsystems;
the layer subsystems each consist of a periodic sequence of at least two periods of individual layers;
the periods have two individual layers composed of different materials for a high refractive index layer and a low refractive index layer, which have within each layer subsystem a constant thickness which deviates from a thickness of the periods of an adjacent layer subsystem; and
the layer arrangement preferably has three different periodic layer subsystems.

6. The optical imaging system of claim 5 , wherein the two individual layers forming a period consist either of molybdenum and silicon or ruthenium and silicon.

7. The optical imaging system of claim 6 , wherein the individual layers are separated by at least one barrier layer consisting of a material comprising at least one material selected form the group consisting of B 4 C, C, Si nitride, Si carbide, Si boride, Mo nitride, Mo carbide, Mo boride, Ru nitride, Ru carbide and Ru boride.

8. The optical imaging system of claim 1 , wherein the optical imaging system is designed for EUV radiation from a wavelength range of between approximately 5 nm and approximately 30 nm.

9. The optical imaging system of claim 1 , wherein the imaging system comprises an even number of mirrors.

10. The optical imaging system of claim 1 , wherein the optical imaging system comprises exactly six mirrors.

11. The optical imaging system of claim 1 , wherein the mirror surfaces of the mirrors of the imaging system are static freeform surfaces, and a freeform surface is a rotationally asymmetrical surface whose surface coordinates preferably deviate by at least one wavelength from a best matched rotationally symmetrical surface.

12. A projection objective comprising an optical imaging system according to claim 1 , wherein the projection objective is a microlithography projection objective.

13. A projection exposure apparatus, comprising:
an illumination system; and
a projection objective comprising an optical imaging system according to claim 1 ,
wherein the projection exposure apparatus is a microlithography projection exposure apparatus.

14. The projection exposure apparatus of claim 13 , wherein a mirror of the optical imaging system having a largest angle of incidence range has a phase optimized layer arrangement in which, for each angle of incidence of the angle of incidence interval, a relative average phase for each wavelength within the wavelength bandwidth deviates by a maximum of 25° from a relative average phase at the main wavelength.

15. The projection exposure apparatus of claim 13 , wherein only a mirror of the optical imaging system having a largest angle of incidence range has a phase optimized layer arrangement in which, for each angle of incidence of the angle of incidence interval, a relative average phase for each wavelength within the wavelength bandwidth deviates by a maximum of 25° from a relative average phase at the main wavelength.

16. The projection exposure apparatus of claim 13 , wherein a mirror of the optical imaging system having a maximum angle of incidence of at least 22° and at which the angle of incidence range has a bandwidth of at least 10° has a phase optimized layer arrangement in which, for each angle of incidence of the angle of incidence interval, a relative average phase for each wavelength within the wavelength bandwidth deviates by a maximum of 25° from a relative average phase at the main wavelength.

17. The projection exposure apparatus of claim 13 , wherein the imaging system comprises an even number of mirrors.

18. The projection exposure apparatus of claim 13 , wherein the optical imaging system comprises exactly six mirrors.

19. A method of using a microlithography projection exposure apparatus comprising an illumination system and a projection objective, the method comprising:
using the illumination system to illuminate a reticle; and
using the projection objective to project an image of the reticle onto a wafer, the projection objective comprising an optical imaging system according to claim 1 .

20. The optical imaging system of claim 1 , wherein the plurality of mirrors comprises at least six mirrors, and the at least one mirror is the fifth mirror in the beam path between the object plane and the image plane.

21. The optical imaging system of claim 20 , wherein the fifth mirror in the beam path between the object plane and the image plan has a largest angle of incidence range.

22. The optical imaging system of claim 21 , wherein only the fifth mirror in the beam path between the object plane and the image plan has a phase optimized layer arrangement in which, for each angle of incidence of the angle of incidence interval

Assignees

• Dodoc Aurelian
• Zaczek Christoph
• Migura Sascha
• Braun Gerhard
• Mann Hans-Juergen
• Paul Hans-Jochen
• Zeiss Carl Smt Gmbh

Inventors

• Dodoc Aurelian
• Zaczek Christoph
• Migura Sascha
• Braun Gerhard
• Mann Hans-Juergen
• Paul Hans-Jochen

Classifications

• G02B17/0657 Primary

  off-axis or unobscured systems in which all of the mirrors share a common axis of rotational symmetry · CPC title

• G03F7/70233

  Optical aspects of catoptric systems, i.e. comprising only reflective elements, e.g. extreme ultraviolet [EUV] projection systems · CPC title